MWI225-12E9 Allicdata Electronics
Allicdata Part #:

MWI225-12E9-ND

Manufacturer Part#:

MWI225-12E9

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT SIXPACK E+
More Detail: IGBT Module NPT Three Phase Inverter 1200V 355A 14...
DataSheet: MWI225-12E9 datasheetMWI225-12E9 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1mA
Base Part Number: MWI
Supplier Device Package: E+
Package / Case: E+
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 225A
Power - Max: 1400W
Current - Collector (Ic) (Max): 355A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter
IGBT Type: NPT
Part Status: Obsolete
Description

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MWI225-12E9 is one of the IGBT modules developed by Mitsubishi Electric, and it has a wide range of applications in power electronics. With its low on-resistance and high-speed switching capacity, MWI225-12E9 is particularly suitable for high frequency switching power supplies, snubber circuits, and rectifier bridges.

The working principle of MWI225-12E9 is based on the IGBT (Insulated Gate Bipolar Transistor). This type of transistor has two main parts: a bipolar transistor and an insulated gate, which are connected in series. The insulated gate controls the current flow through the bipolar transistor by its voltage. When the voltage at the gate is high, the current flow increases, creating an "on" state, while a low voltage keeps the transistor in an "off" state.

The main feature of this module is its high-speed switching capacity. It can be switched on and off at a very high frequency, enabling it to switch current rapidly, which is essential for applications such as power supplies and snubber circuits. The other important feature of the MWI225-12E9 is its low on-resistance. This means that even when the transistor is in its "on" state, the current flow will be highly regulated and limited. This helps with efficiency and heat dissipation, which are key factors in any power electronics application.

The MWI225-12E9 can be used for many applications, including DC to DC converters, rectifier bridges, switched-mode power supplies, snubber circuits, and any other power electronics application which requires high frequency switching. Additionally, the MWI225-12E9 is well suited to applications which require both high efficiency and high power density, meaning that it is a highly versatile device.

In summary, the MWI225-12E9 is a highly versatile IGBT module developed by Mitsubishi Electric, and it has a wide range of applications in power electronics. Its main features include high-speed switching capacity and low on-resistance, making it suitable for applications such as DC to DC converters, rectifier bridges, switched-mode power supplies, and snubber circuits.

The specific data is subject to PDF, and the above content is for reference

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