MWT-173

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The MWT-173 field effect transistor (FET) is a later generation of radio frequency transistor first introduced in the late 1960s for use with consumer consumer RF applications. It is now a popular choice for use in a variety of general purposes both within consumer and commercial products.

The MWT-173 operates with a depletion type field effect transistor structure, which makes it well-suited to RF applications. The transistor is also known to be efficient and has good power-handling characteristics. In contrast to bipolar transistors, the MWT-173 operates with a gate bias. This means that the current is controlled by the amount of voltage applied through the gate and it does not require that a collector-emitter junction be present.

The working principle of the MWT-173 FET is based on the operation of the field effects. When the voltage applied to the gate is increased, the electrons from the drain become increasingly attracted to the region near the gate. As the current increases, the electrons build up around the region in front of the gate and form a depletion layer. This layer increases in size and prevents electrons travelling from the drain to the source. At a certain voltage level, the current is fully off and the transistor is said to be in the \'cut off\' mode.

The reverse of this is also true. When the voltage applied to the gate is decreased, the electrons from the drain are repelled away from the gate region, decreasing the depletion layer size and allowing more current to flow. At a certain voltage level, all of the electrons will be able to flow through the transistor and it is said to be in the \'saturation\' mode.

The two modes of operation, cutoff and saturation, can be used to create different levels of current and/or voltage in different parts of the circuit. The main advantage of FETs compared to bipolar transistors is that they have a very low input capacitance, providing very little frequency-dependant loading. This makes the MWT-173 particularly well-suited for use in radio-frequency circuits.

Another important advantage of FETs is that they are often more power-efficient than other types due to their higher current gain and lower demand for power dissipation. Although the gain of FETs is generally lower than that of bipolar transistors, their operating frequency can often be significantly higher due to their lower input capacitance. This makes them ideal for use in high frequency switching circuits, where it is necessary to switch a large amount of current very quickly.

The MWT-173 is a popular choice for use in a wide range of RF applications, including RF amplifiers, filters, oscillators, switches, drivers, and power monitor and control circuitry. In addition, it is also used in a variety of non-RF applications, such as power computer circuits, light dimmers, temperature sensors, and motor control circuits. Due to its versatility, the MWT-173 has become one of the most popular transistors used in both commercial and consumer products, ranging from radios to remote controls.

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