MWT-1789SB

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MWT-1789SB is a 4-terminal high-frequency MOSFET that is designed to be used as switching and amplifier devices in RF applications. It utilizes a high-voltage junction gate field-effect transistor (JFET) and a laterally diffused MOSFET (LDMOS) for fast, low-noise and highly reliable performance. The MWT-1789SB is designed to operate from a wide supply voltage range (2.2 V to 10 V) and can operate at frequencies of up to 13 GHz.

The device features good linearity, low phase noise and a high breakdown voltage, making it an ideal choice for RF applications. It is used in cellular base station power amplifiers, radar systems and microwave radios. The device provides low gate-source capacitance and is ideal for low-noise operation. It also offers a high breakdown voltage of more than 150 V.

The device consists of three terminals, namely the gate, drain and source. The drain terminal is used as input and the source is used as the output. When a voltage is applied to the gate terminal, it forms an electric field which is used to modulate the current flow between the drain and source terminals. This modulation is used to amplify signals in RF applications.

The device is usually encased in a plastic package. This helps protect the device from environmental factors. It also prevents the electric field from radiating into area outside the package. The device is designed to handle high temperatures while still giving its best performance. The device is also able to maintain a high breakdown voltage, even at a high temperature.

In order to ensure the best performance of the device, the components of the system should be checked periodically to ensure they maintain the required level of performance. For instance, the gate source capacitance should be checked to ensure that it does not increase or decrease too much. Furthermore, the drain source voltage should also be checked to make sure it does not fall beyond the given range.

The MWT-1789SB is a reliable and powerful device for RF applications. It can be used for a wide range of applications and its construction ensures high performance and reliability. Furthermore, the device has good linearity, low phase noise and a high breakdown voltage, making it an ideal choice for RF applications.

In conclusion, the MWT-1789SB is an ideal device for RF applications. It is a high-frequency MOSFET with a high breakdown voltage, superior linearity and low phase noise. It is constructed in an environment-resistant plastic housing and can handle up to a maximum operating temperature of 150°C. Furthermore, it is capable of operating at frequencies up to 13 GHz and can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference