Allicdata Part #: | 1203-1032-2-ND |
Manufacturer Part#: |
MWT-773 |
Price: | $ 11.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microwave Technology Inc. |
Short Description: | FET RF 5V 26GHZ PKG 73 |
More Detail: | RF Mosfet MESFET 3V 10mA 500MHz ~ 26GHz 8dB 20dBm ... |
DataSheet: | MWT-773 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 10.89270 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | MESFET |
Frequency: | 500MHz ~ 26GHz |
Gain: | 8dB |
Voltage - Test: | 3V |
Current Rating: | 98mA |
Noise Figure: | 12dB |
Current - Test: | 10mA |
Power - Output: | 20dBm |
Voltage - Rated: | 5V |
Package / Case: | Nonstandard SMD |
Supplier Device Package: | 73 |
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The MWT-773 is a low‑noise, wide-band, GaAs FET amplifier designed for use in high-performance radio frequency (RF) applications. It offers excellent gain, low noise figure, high linearity, and wideband frequency response. The MWT-773 is ideal for use in a wide variety of applications including commercial and military RF circuits, radio receivers, and radio transmitters.
Description
The MWT-773 is an enhancement‑mode, static, Gallium Arsenide (GaAs) field‑effect transistor (FET). It is fabricated using Metal‑Oxide‑Semiconductor Field Effect Transistor (MOSFET) technology. It has an active gate length of 0.25 µm and is able to operate in a wide range of frequencies from 500 kHz up to 6 GHz. It also has a typical gain of 17 dB and a RMS noise figure of 1.2 dB.
Application
The MWT-773 is designed for use in a wide variety of applications that require low noise, high linearity and wideband frequency response, such as radio receiver designs. It is particularly suitable for use in military and commercial RF applications, including naval ships, air traffic control systems, and many other environments. It can also be used in cellphone and Bluetooth base stations, satellite signal reception, television broadcast, and wireless communication systems. In addition, the MWT-773 can be used in wireless personal area networks (WPANs) like Wi-Fi and Zigbee.
Working principle
The MWT-773 operates using MOSFET technology. This technology utilizes an electric field to control the flow of current through the device. It consists of a gate, a source and a drain, which are the three electrodes used to control and regulate the flow of current inside the transistor. A small voltage applied to the gate, creates an electric field within the device that changes the current flow through the channel between the two other electrodes. By adjusting the Gate voltage, we can also change the current flow, and thus control the power output.
The MWT-773 can be used as a RF amplifier because of its wide linearity characteristics, which is very important in radio frequency design. This means that it can output relatively clean signals even when the input signal has a wide frequency and amplitude variation. The high linearity that the amplifier provides also reduces distortion in the output signal and increases overall system performance.
Conclusion
The MWT-773 is a FET amplifier designed for high‑performance RF applications. It offers low noise figure, excellent gain, high linearity, and wideband frequency response. It is suitable for military and commercial applications, such as radio receivers, radio transmitters, and wireless communication systems. The MWT-773 operates using MOSFET technology, which utilizes an electric field to control the current flow through the device. This allows for precise control of the power output and high levels of linearity that gives rise to the excellent performance of the MWT-773 in RF applications.
The specific data is subject to PDF, and the above content is for reference
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