MX29LV160DTXHI-90G Allicdata Electronics
Allicdata Part #:

MX29LV160DTXHI-90G-ND

Manufacturer Part#:

MX29LV160DTXHI-90G

Price: $ 0.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: Macronix
Short Description: IC FLASH 16M PARALLEL 48WFBGA
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8) Parallel 90ns...
DataSheet: MX29LV160DTXHI-90G datasheetMX29LV160DTXHI-90G Datasheet/PDF
Quantity: 1000
1470 +: $ 0.83775
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Series: MX29LV
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-WFBGA, CSPBGA
Supplier Device Package: 48-WFBGA, CSP (4x6)
Description

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The MX29LV160DTXHI-90G is a type of memory with a wide application field. It is a high density, 16-Mbit, electrically alterable programmable read-only memory (EEPROM) that is often used in digital devices, as well as automotive, consumer, and industrial equipment. With a wide range of functions, the MX29LV160DTXHI-90G is a great memory chip for a variety of device designs.

To begin, the MX29LV160DTXHI-90G offers the highest level of reliability and performance, with excellent write and erase endurance, data retention and reliability. In addition, it features fast access time, unique security features, and low operating current. This memory chip is also known for its compatibility and efficiency, well suited for many different applications.

The MX29LV160DTXHI-90G offers several key features that make it ideal for use in circuit boards and digital devices. Firstly, it offers extended retention and full read/write capability. Built-in protection against voltage and ESD (Electrostatic Discharge) increases reliability and safety. Secondly, its improved sensing capability offers enhanced paralleled addressable bits. This helps to speed up the data transferring process, reducing latency.

In terms of working principle, the MX29LV160DTXHI-90G features a basic cell design, which includes a source and drain region connected to a gate terminal. The gate terminal is connected to a casing, which acts as the gate oxide dielectric layer. This allows electrons to flow to the drain region, which creates the programming voltage. This voltage is strong enough to cause changes in the programmed cells, thus storing data.

The MX29LV160DTXHI-90G is a reliable, high density memory chip that is suitable for a variety of device designs. Its extended retention and full read/write capabilities make it an ideal choice for digital devices, as well as automotive, consumer, and industrial applications. Its compatibility, efficiency, and improved sensing capability help to speed up the data transferring process, making it a great option for circuit boards and digital devices.

The specific data is subject to PDF, and the above content is for reference

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