MX29SL800CTXEI-90G

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Memory is an integral part of any electronic device and is key to the efficient functioning of a system. The MX29SL800CTXEI-90G is an example of a high-performance CMOS non-volatile memory. It is designed to provide fast, reliable and cost-effective solutions for today’s embedded systems.

The device consists of an 8K × 9-bit array (a total storage capacity of 72Kb) of electrically alterable, on-chip random-access-memory (EPROM), which is divided into nine sectors, each having the ability to write eight bits per word of data. These eight bits of data are arranged in the form of two bytes, forming an eight-character word. The benefits of this structure are that you can place memory information in multiple areas and quickly jump between them, allowing easy access to stored data.

The MX29SL800CTXEI-90G has extended memory capacity compared to other CMOS non-volatile memories and thus supports single-high byte write, byte read, and sector write functions. It also enables you to write and read data to/from the memory at speeds up to 33MHz. In addition, the device has an erase lock-bit which is used to disable erasing and the sector write functions, providing enhanced data and program code Protections from unauthorized erasure or rewriting.

The main application field of the MX29SL800CTXEI-90G is for embedded systems where high-speed memory access and storage is essential. It is ideal for use in industrial and automotive applications, medical instrumentation, imaging systems, personal and home entertainment systems, telecommunications, and any other embedded device calling for reliable, low-cost persistent storage. It is also suitable for systems requiring larger data sizes, such as digital cameras, personal digital assistants (PDAs), personal computers, etc.

The working principle of the MX29SL800CTXEI-90G is quite simple. Data is written and stored in the non-volatile memory cells on-chip. These cells are located in each sector and can store one byte, consisting of 8 bits. Data is written to the memory cell by setting the desired bit values, before storing the data to the memory cell. The contents of the cells can be read back by accessing the relevant address and transferring the data. Erasing can be performed by setting all the bits in a cell to the ‘0’ state, overwriting them with new data.

In conclusion, the MX29SL800CTXEI-90G is a high-performance CMOS non-volatile memory. It has an extended memory capacity and fast access times, making it ideal for use in embedded systems where speed and reliability are key. It has a wide range of applications from industrial and automotive, to medical and home entertainment systems.

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