MX29LV800CBMC-90G Allicdata Electronics
Allicdata Part #:

MX29LV800CBMC-90G-ND

Manufacturer Part#:

MX29LV800CBMC-90G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Macronix
Short Description: IC FLASH 8M PARALLEL 44SOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ...
DataSheet: MX29LV800CBMC-90G datasheetMX29LV800CBMC-90G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MX29LV
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP
Description

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The MX29LV800CBMC-90G is a type of memory, which is composed of a wide array of tiny individual components. It has many applications and is a popular choice for many products, because of its low cost, high density, and low power consumption. It is commonly used in embedded systems, gaming consoles, medical devices, etc.

The main features of the MX29LV800CBMC-90G are its low-voltage operation, wide range of temperatures, high speed, excellent data retaining performance. Its low-voltage operation allows it to work with various power sources, while its wide temperature range allows it to operate in severe environmental conditions. Additionally, its high-speed operation provides quick access to data, while its excellent data retention performance ensures reliable data storage over long periods.

The working principle of the MX29LV800CBMC-90G is simple. It uses a single-layer polysilicon gate over a thin layer of insulation to detect the presence and absence of a memory cell. The presence of a memory cell is detected by a process known as Fowler-Nordheim tunneling. This involves the application of a voltage differential between the polysilicon gate and the underlying insulation. This voltage differential creates an intense electric field, which in turn causes electrons to tunnel through the insulation and the gate, indicating the presence of a memory cell.

The MX29LV800CBMC-90G also features several different types of memory. It can operate in asynchronous mode, as well as synchronous mode, depending on the application. Synchronous mode allows for faster speeds but also requires more power, while asynchronous mode is slower but consumes less power. The device also offers several On-Chip options, such as Fast-Write, Sleep mode, and Deep-Power-Down to reduce power consumption and improve performance.

In addition to the benefits outlined above, the MX29LV800CBMC-90G also has a few other advantages over other types of memory. It offers enhanced security and robustness, thanks to its advanced error correction capabilities. It also has superior protection against high-frequency noise and interference. Its small size makes it well-suited for applications where space is limited, as well as cost-sensitive applications.

In conclusion, the MX29LV800CBMC-90G is an excellent choice of memory for many applications. Its features and advantages make it one of the most popular choices for a wide variety of applications, including embedded systems, gaming consoles, medical devices, and more. Its low cost, high density, and low power consumption make it an attractive choice for those looking to maximize their memory space while minimizing their power usage. Additionally, its advanced error correction, robustness, and protection from high-frequency noise and interference make it an ideal choice for any application. Whether it is used for embedded systems, gaming consoles, medical devices, or any other application, the MX29LV800CBMC-90G is sure to increase performance and efficiency, while saving money and space.

The specific data is subject to PDF, and the above content is for reference

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