MX29F400CTMI-70G

The MX29F400CTMI-70G belongs to the non-volatile memory family and is widely used in a variety of applications. It is a 4M-bit (512K byte), 70ns CMOS NAND Flash device, organized into 512 blocks of 32K bytes each. The MX29F400CTMI-70G is well suited for applications that need a large capacity, low cost, non-volatile memory.

The MX29F400CTMI-70G is a true NAND Flash memory, using a dual charge pump to achieve 70ns access time, on a single +5V supply voltage. Its command set is derived from the industry standard NAND Flash interface. The MX29F400CTMI-70G command set is backward compatible with earlier products in the MAXIM NAND Flash family. Special commands make it easy to add manufacturer-specific features to the device.

In addition to its low power consumption, the MX29F400CTMI-70G has two address registers to make random accesses to the device extremely efficient. The device uses an 8-bit microprocessor compatible bus for all control and data paths. Cycle time is less than 70ns.

The MX29F400CTMI-70G can be used as a code storage medium for cell phones, digital cameras and will also be of use in applications such as set-top boxes, PDAs and Personal Navigation Devices (PNDs).

Working Principle

The MX29F400CTMI-70G is a non-volatile memory that uses a charge pump and NAND architecture to store data. The device is organized as 512 blocks of 32K Bytes each, with a page size of 2048 bytes. The data is stored in NAND arrays and stored in memory cells organized in columns and rows. The charge pump provides charge to the gate capacitance of the memory cells, via the bit lines, so that the state of the memory cells can be read and written.

The erase operation is relatively simple, as the device requires an erase voltage to be applied for a certain duration of time. During the erase cycle, the upper levels of the NAND array are each connected to the erase voltage so that it can be discharged into the ground. When the erase voltage is removed, the charge capacitance of the memory cells is brought back to a level where it can be read and written, therefore erasing the data stored in them.

To write data, a voltage is applied to the bit line corresponding to the data bit and pulsed for a certain duration of time. This will cause an increase in the charge of the gate capacitance and therefore the cell can be programmed to store logic one or logic zero. To read data, a voltage is applied to the gate capacitance of the memory cells and then read out through the bit lines.

The MX29F400CTMI-70G is an ideal choice for applications requiring high reliability, fast access time and low power consumption. It is a cost-efficient solution for applications that require large capacity, low cost, non-volatile memory.