MXLCE110AE3 Allicdata Electronics

MXLCE110AE3 Circuit Protection

Allicdata Part #:

1086-10068-ND

Manufacturer Part#:

MXLCE110AE3

Price: $ 16.62
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 178V CASE-1
More Detail: N/A
DataSheet: MXLCE110AE3 datasheetMXLCE110AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 15.11020
Stock 1000Can Ship Immediately
$ 16.62
Specifications
Voltage - Clamping (Max) @ Ipp: 178V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 8.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

The MXLCE110AE3 is a unidirectional ultra-low capacitance ESD protection diode. It is a member of the Transient Voltage Suppression (TVS) family of diodes and is used in USB and other high-speed data line protection applications. Its low capacitance facilitates low signal propagation delay, allowing it to function effectively in high-speed applications.

Application Field

Developed for high-speed data line protection applications, the MXLCE110AE3 conforms to the IEC 61000-4-2 (ESD) and IEC 61000-4 triboelectric (contact discharge) levels for all types of connectors. It is also suitable for use as a general-purpose ESD protection diode in consumer and industrial electronics. This device can protect any IC and high-speed data lines from ESD, electrostatic discharge, and short-term surge transients.

Working Principle

A voltage regulator integrated inside the MXLCE110AE3 prevents its junction voltage from exceeding the rated breakdown voltage. This ensures that the diode withstands strong transient surge voltages that may be caused by short duration lightning strikes, electrostatic discharge, or surge interference. During normal sustained voltages, the MXLCE110AE3 is reverse-biased and conducted no current. However, when the voltage across its terminals surpasses the breakdown voltage, its low capacitance semiconductor junction begins to conduct current. The peak pulse current and peak power dissipated can exceed 100A and 1W respectively. After the transient passes, the junction returns to its reverse-biased state.

Conclusion

The MXLCE110AE3 is designed to protect sensitive electronics from transient electrical events. It offers ultra-low capacitance for low signal propagation delay in high-speed applications while providing superior ESD protection. This device can be implemented to protect any IC and high-speed data lines from ESD and short-term surge transients.

The specific data is subject to PDF, and the above content is for reference

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