MXLCE17AE3 Circuit Protection

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TVS, or Transient Voltage Suppressors, are silicon diodes that are designed to protect circuits from the damaging effects of transient voltage spikes. In particular, they are designed to prevent power over voltage events and are usually found in power supplies, automotive systems, and even some consumer electronics. The MXLCE17AE3 is a type of TVS diode developed specifically to protect low voltage (<30 V) applications from transient voltage spikes.

The MXLCE17AE3 is designed to provide low capacitance protection for differential receiver inputs and other sensitive components in a system. It has a low capacitance value of 0.7 pF typical, which helps minimize capacitive coupling between signal lines. The diode also features an ESD (electrostatic discharge) rating of 8 kV (contact) and 15 kV (air) for use in environments with high levels of electrostatic charge. Moreover, the MXLCE17AE3 has a very low leakage current (under 20 μA).

The working principle of the MXLCE17AE3 lies in its ability to quickly detect and protect a circuit against transient voltage spikes. The diode has a breakdown voltage of 5.5 V, which means that any voltage higher than this will cause the diode to conduct an electric current, clamping the voltage and protecting the circuit from the voltage spike. The diode has a very fast response time of 0.1 μs, meaning that it will start conducting almost immediately to protect the circuit.

The MXLCE17AE3 is an ideal solution to protect circuits from transient voltage spikes in applications such as automotive systems, laptops, cell phones, and consumer electronics. Its combination of low capacitance and low ESD rating make it well suited for such applications, while its fast response time ensures that a voltage spike will be quickly and effectively clamped to protect the system.

In summary, the MXLCE17AE3 is a TVS diode specifically designed to protect low voltage (<30 V) circuits from transient voltage spikes. It has a breakdown voltage of 5.5 V and a fast response time of 0.1 μs, in addition to a low capacitance value and ESD rating. It is an ideal solution for protecting electronic systems from power over voltage events.

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