MXLCE51AE3 Circuit Protection

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The MXLCE51AE3 is a part of the Transient Voltage Suppressor (TVS) diode family. The component is designed for use in linear low side applications, especially for devices with increased protection requirements. The component offers wide-ranging protection over a variety of use cases during peak voltage events, such as electrostatic discharge (ESD), lightning, and other transient events. The MXLCE51AE3 is a bidirectional, low profile, surface mount, diode with dual interface terminals – in the standard TO-257AA footprint – and low foot-print size for optimizing design flexibility.

The MXLCE51AE3 TVS diode is designed with a very low capacitance of 1.2pF typical and is rated for a peak pulse power of 500W without reaching beyond +125°C. The diode can handle a maximum off-state critical voltage of 11V and has an operating temperature range of -55 to +125°C. For holding voltage, it has a peak maximum off-state voltage of 57.3V.

The MXLCE51AE3 offers protection from a wide variety of peak voltage events by utilizing a low capacitance design, which allows it to respond in a single nanosecond, across a Varied systems in a variety of applications. Several application example cases include solid-state Power Supplies, Microprocessors, and Digital Motors.

The working principle of the MXLCE51AE3 is simple but effective, allowing it to break down at pre-defined voltage levels. When the voltage across the diode exceeds the breakdown voltage, electrons are quickly delegated to the active P-type region that lies between the anode and cathode. This in turn causes a sudden increase in the current flowing through the diode. As more voltage is applied, the current increases until the diode reaches its maximum. When the peak pulse voltage is removed, the device resumes its normal, non-conductive state.

Furthermore, the MXLCE51AE3 can also be used with a range of speciality components like Schottky diodes, avalanche breakdown diodes, and voltage multipliers for protection and higher voltage levels. Some example applications of a Schottky and an avalanche breakdown diode in combination with the MXLCE51AE3 are detailed further. In these instances, the Schottky diode provides more discrete protection from over current events, while avalanche breakdown diodes offer more robust durability from peak voltages. The MXLCE51AE3’s ability to be used with speciality components makes it a great choice for a variety of applications.

The MXLCE51AE3 is easy to use – the TVS diode is designed for plug-and-play compatibility with its SMT, TO-257AA form factor. Additionally, it meets global safety standards (UL, C6.2-1, CISPR, etc.), providing easy design compliance. Its compact dimensions and exceptional ESD/lightning protection performance, 10KV ESD and 1000V Primary Protection – make the device convenient for applications requiring high power handling and voltage transient protection. As this diode is created using lead-free packages, making the MXLCE51AE3 RoHS compliant.

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