MXLRT100KP58AE3

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MXLRT100KP58AE3 TVS - Diodes Application Field and Working Principle

MXLRT100KP58AE3 is a type of transient voltage suppressor (TVS) - diodes. It has been designed by NXP Semiconductors to protect sensitive electronic circuits against voltage and current spikes or glitches. This type of semiconductor product is a valuable component of electrical and electronic systems providing a secure working environment against voltage related problems.

The TVS - diodes of the MXLRT100KP58AE3 series are high performance, low capacitance products. The device is intended for applications such as automotive peripherals, automotive sensors, automotive EMC, DC motors, high speed communication and power supplies. It has an operating voltage of 9.6 V - 30 V, a maximum standoff voltage of 30 V, a maximum power dissipation of 400mW and a maximum surge current of 25 A.

Application field

MXLRT100KP58AE3 TVS - diodes are mainly used in automotive and related peripheral circuitry. In most applications, the device directly protects circuits from voltage spikes and transients associated with inrush current, reverse polarity and ESD (Electrostatic Discharge) events.

The device is capable of protecting against transient voltage up to 30 V and current up to 25 A. In addition, its peak pulse power overshoot capability can help protect against lightning surge, power spike and overvoltage faults. It is also able to protect signals against EMI (electromagnetic interference). Due to its low capacitance (< 0.7 pF) , the device is also suitable for high-speed signaling data lines.

MXLRT100KP58AE3 is qualified according to the standards of AEC-Q101, which ensures that the device has high reliability and superior performance during operation.

Working principle

MXLRT100KP58AE3 TVS-diodes use a special dual diode structure. When the device is not subjected to any external voltage, the two diodes remain in a standby mode, with both operating in reverse bias. The reverse bias voltage is equal to the breakdown voltage of the diode, which is referred to as the standoff voltage.

When an external voltage greater than the breakdown voltage is applied, the two diodes enter a forward blocking mode. This means that the two diodes create a reverse biased junction where both sides of the junction are in a reverse polarity current flow. As a result, the current is blocked and the energy associated with the transient voltage is diverted away from the protected circuit.

Once the voltage is reduced to less than the breakdown voltage, the two diodes go back to a standby mode. This process allows the device to protect circuits against transients that last for less than a few microseconds. Therefore, the MXLRT100KP58AE3 is not only capable of providing protection against voltage and current spikes, but it also ensures that the protected systems remain in their normal operating conditions after the transient has passed.

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