MXLSMBG33AE3 Allicdata Electronics

MXLSMBG33AE3 Circuit Protection

Allicdata Part #:

1086-11454-ND

Manufacturer Part#:

MXLSMBG33AE3

Price: $ 7.61
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33V 53.3V DO215AA
More Detail: N/A
DataSheet: MXLSMBG33AE3 datasheetMXLSMBG33AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.91545
Stock 1000Can Ship Immediately
$ 7.61
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 11.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are electrical components used to protect electronic circuit systems from high voltage surges, such as electrostatic discharge or lightning. The MXLSMBG33AE3 is a tri-level surge dissipative silicon, a type of TVS - Diode, with 1500 watts of peak pulse power, and a working voltage of 18 - 33 V. It offers both efficient unipolar and bipolar protection from lineside transients.

The MXLSMBG33AE3 is primarily composed of silicon which is constructed with a thin-film passivation and high temperature co-fired ceramic with a copper back metal. It offers a breakdown voltage of 21.6 V minimum and a clamping voltage of 27.6 V maximum. The MXLSMBG33AE3 is specifically designed for secondary lightning and ESD protection of data and signal lines across telecommunications applications, such as base station terminals, field site monitors, router/hub ports, fiber-optic line terminators, and similar systems.

The MXLSMBG33AE3 is composed of two series circuits connected in parallel, both of which offer significant protection. The first is a Zener Diode which will remain in an “on” state most of the time, allowing a current to pass through it. However, when a high-energy transient occurs, the Zener diode will increase in voltage significantly, allowing the device to divert most of the transient away from the protected circuit. The second is a PN junction diode which also begins in an “on” state and allows current to pass through it. When a transient occurs, the diode will surge its voltage allowing it to absorb the transient from the protected device.

The MXLSMBG33AE3 also has active protection features including reverse polarity protection and over-temperature protection. Reverse polarity protection helps to prevent damage from occurring if the correct impedance is not present on the circuit. Over-temperature protection works to disconnect the protected circuits if the temperature rises above a specified level to prevent further damage to the circuits.

The MXLSMBG33AE3 offers cost-effective protection and higher surge ratings than other surge protection devices. Its tri-level protection enables more powerful transient absorption compared to traditional dual-level protection solution devices. It also offers consistent performance of unipolar and bipolar pulse events and has the ability to withstand severe conditions including temperature extremes, moisture, and vibration. The MXLSMBG33AE3\'s durability and effectiveness makes it an ideal choice for high-voltage protection applications.

The specific data is subject to PDF, and the above content is for reference

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