MXLSMCJ12AE3 Circuit Protection |
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Allicdata Part #: | 1086-12062-ND |
Manufacturer Part#: |
MXLSMCJ12AE3 |
Price: | $ 7.43 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 12V 19.9V DO214AB |
More Detail: | N/A |
DataSheet: | MXLSMCJ12AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.76229 |
Voltage - Clamping (Max) @ Ipp: | 19.9V |
Supplier Device Package: | DO-214AB (SMCJ) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 75.3A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 13.3V |
Voltage - Reverse Standoff (Typ): | 12V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressor) diodes are commonly used in the industry for circuit protection against power surges, such as lightning strikes and electrostatic discharge. The MXLSMCJ12AE3 is a TVS diode specifically designed to protect applications from very high-energy, transient events. In this article, we will look into the application field of the MXLSMCJ12AE3, as well as its working principle.
Application Field
The MXLSMCJ12AE3 is a bidirectional device used for protecting high-speed signal and low voltage power lines. It is often used in automotive, industrial, medical, communication, consumer, and military/aerospace applications. It is also used to protect non-data communication lines used in Panel PCs, industrial control systems, and HVAC systems.
The MXLSMCJ12AE3 offers excellent Interchangeable Transient Voltage Suppression (TVS) performance across a variety of conditions. It provides 15KW Peak Pulse Power (PPP) and Low Clamping Voltage (VC) of 5.4V at 330A/2000W for 8/20μs pulse waveform of 10KW/50V.
Working Principle
The working principle of the MXLSMCJ12AE3 TVS diode is relatively simple. The device works by suppressing high-energy transients, such as lightning strikes and electrostatic discharge, which could otherwise damage sensitive electronic components. The MXLSMCJ12AE3 works by absorbing and dissipating the energy of the transient, protecting the sensitive components from harm.
The MXLSMCJ12AE3 working mechanism is made possible by its Zener diode construction. Its construction consists of a PN junction capacitor and a Zener diode in parallel with each other. This allows the device to absorb the energy of the transient, limiting the voltage across the protected lines. The device can then dissipate the energy, diverting it away from the circuit and protecting the components from harm.
The MXLSMCJ12AE3 provides peak power handling capabilities of 15KW peak pulse power (PPP) and low clamping voltage of 5.4V at 330A/2000W for 8/20μs pulse waveform of 10KW/50V. This allows the device to provide superior protection to sensitive electronics from high-energy transient events.
Conclusion
The MXLSMCJ12AE3 is a TVS diode specifically designed to protect applications from very high-energy, transient events. It is often used in automotive, industrial, medical, communication, consumer, and military/aerospace applications. The device works by suppressing high-energy transients, such as lightning strikes and electrostatic discharge, by absorbing and dissipating the energy of the transient. The device features 15KW peak pulse power (PPP) and low Clamping Voltage (VC) of 5.4V for 8/20μs pulse waveform of 10KW/50V, providing superior protection to sensitive electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MXLSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
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