MXLSMBJ160A Circuit Protection |
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Allicdata Part #: | 1086-11593-ND |
Manufacturer Part#: |
MXLSMBJ160A |
Price: | $ 7.11 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 160V 259V DO214AA |
More Detail: | N/A |
DataSheet: | MXLSMBJ160A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.45599 |
Voltage - Clamping (Max) @ Ipp: | 259V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 2.3A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 178V |
Voltage - Reverse Standoff (Typ): | 160V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The MXLSMBJ160A is a TVS (Transient Voltage Suppressor) Diode that operates in the breakdown region at higher peak voltages. The diode offers excellent performance characteristics such as low inductance, fast response, and supply current of up to 3A in the breakdown region. The device is also designed to have low Forward Voltage (VF), Reverse Leakage (IR) and high capacitance (CT). The MXLSMBJ160A serves a range of protective applications from telecom, industrial, automotive and consumer electronics.
The main purpose of the MXLSMBJ160A is to limit the voltage across a device or circuit while operating the device under high peak voltage conditions. The diode acts as a switch that is opened when the voltage applied to it exceeds a certain threshold. When this voltage is exceeded, the MXLSMBJ160A will shunts current away from the protected device, preventing damage. The device can also be used to suppress transients by dissipating the energy during voltage surges.
The MXLSMBJ160A is a Dual-Meter TVS offering greater protection. Dual-Meter TVS devices provide enhanced protection with one device that can protect both high voltage and low voltage side of a circuit. The MXLSMBJ160A is suitable for providing protection from transients in industrial applications such as motor drives, robotics or welding controls, where the switching transients from motors or welding equipment can create damaging voltages moments and disrupt operation.
The working principle of the MXLSMBJ160A is based on the P-type Semiconductor. The MXLSMBJ160A is composed of a P-type semiconductor material sandwiched between two N-type semiconductor materials. During the normal operating condition, the P-type material is connected to the external circuit and the two N-type materials are connected together.
When a voltage is applied across the device, the P-type material starts to take in current and the voltage across the MXLSMBJ160A rises until a predetermined “breakdown” voltage is reached. At this point, current will start to flow between the two N-type materials and the device will start blocking the flow of current from the external circuit. Thus, the voltage further across the device will be clamped to the breakdown voltage, thus protecting the external device from further over voltage damage. After the peak voltage has passed, the device will slowly return to its normal state.
The MXLSMBJ160A is a robust and reliable device which can effectively protect a wide range of applications from transient voltage and destructive overvoltage transients. It’s low inductance and forward voltage make it especially suited for switching applications. Moreover, its high capacitance and low reverse leakage current make it suitable for high speed communications and other sensitive applications. Thus, the MXLSMBJ160A is an ideal choice for a range of protective applications in the telecom, industrial, automotive and consumer electronics market.
The specific data is subject to PDF, and the above content is for reference
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MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
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MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
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