MXLSMBJ60CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-11698-ND |
| Manufacturer Part#: |
MXLSMBJ60CAE3 |
| Price: | $ 7.49 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 60V 96.8V DO214AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBJ60CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.80942 |
| Voltage - Clamping (Max) @ Ipp: | 96.8V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 6.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 66.7V |
| Voltage - Reverse Standoff (Typ): | 60V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS-Diodes, also known as Transient Voltage Suppression Diodes, provide electronic equipment extended protection from transients that can cause damage due to excess voltage, current, or energy. They are necessary components of electrical systems to add protection from potentially costly or dangerous power surges.
One type of TVS-Diode is the MXLSMBJ60CAE3, which is one of a series of voltage-protection devices manufactured by ON Semiconductor. This type of diode is designed to provide electrical protection from transients caused by electrostatic discharges (ESD).
Application Field and Working Principle
The MXLSMBJ60CAE3 is designed for general use across a variety of applications where it is necessary to provide ESD protection. This diode is is particularly suitable for use in low-voltage consumer and communication products, such as cellular phones and portable audio players. The MXLSMBJ60CAE3 is also suitable for low and medium-voltage industrial applications, such as computers, communications and medical equipment.
The working principle of the diode is based on its ability to absorb large amounts of energy over a short time. When a voltage transient is applied to the diode, the “avalanche breakdown” phenomenon of the diode occurs, causing a large surge of current that can be dissipated using power dissipation and protection devices.
The voltage breakdown of the diode is determined by the design of the diode and the temperature at which the diode is operating. The breakdown voltage of the MXLSMBJ60CAE3 is typically 60 V, with an operating temperature range of –55°C to 125°C. The device features ESD protection with an IEC61000-4-2 rating of ±8 kV (contact discharge) and ±15 kV (air discharge).
The MXLSMBJ60CAE3 has a peak power dissipation of 3 W and can be used in high temperature applications. It is also equipped with a low capacitance of only 3 pF and a low insertion loss of 0.10 dB. The device features a low holding voltage and can be used in both unidirectional and bidirectional circuits.
The package of the MXLSMBJ60CAE3 is a SOT-25 package, with a height of only 0.7mm. It is designed to dissipate heat efficiently, with a total thermal resistance of 40°C/W (junction-sink). It also features a long-term voltage endurance of 1 kV HBM and a short-term voltage endurance of 400 V CDM..
Overall, the MXLSMBJ60CAE3 provides excellent ESD protection in a compact package, making it suitable for a wide range of applications. Its low capacitance and low insertion loss make it well-suited for use in high-speed digital and communication circuits, while its ESD protection and voltage endurance make it ideal for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCJ43AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 43V 69.4V DO214... |
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| MXLSMCJ120CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 120V 193V DO214... |
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| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
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| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
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MXLSMBJ60CAE3 Datasheet/PDF