MXLSMBJSAC8.0 Circuit Protection |
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| Allicdata Part #: | 1086-11767-ND |
| Manufacturer Part#: |
MXLSMBJSAC8.0 |
| Price: | $ 8.23 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 8V 13.4V DO214AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBJSAC8.0 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 7.46914 |
| Voltage - Clamping (Max) @ Ipp: | 13.4V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 30pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 500W |
| Current - Peak Pulse (10/1000µs): | 36A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 8.89V |
| Voltage - Reverse Standoff (Typ): | 8V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS diode stands for Transient Voltage Suppressor Diode, and this electronic component is commonly found in all types of electronic systems. It is often seen in computer systems, telecommunications devices, control systems, and other circuits. Its purpose is to provide electrical protection against over-voltage, voltage transients, transients, noise, overload, ground voltage, and other such hazardous activity that could damage electronic components or cause functional disruption. Specifically speaking, the deployment of TVS diodes helps guard against electrostatic discharge, voltage transients, lightning surge, and so on. When exposed to a higher voltage than the prescribed level, the TVS diode is used to quickly absorb the transients, harmlessly dispersing them into the ground line as a form of electrical protection.
The MXLSMBJSAC8.0 application field is a type of transistors that offers integrated protection circuit devices. It is a three-terminal monolithic junction semiconductor that is designed to protect the power supply voltage from any problem spikes or surge events from either external or internal sources. This electronic component is mostly employed when it comes to protection from over-voltage, over-current, voltage transients, and other dangers. It can also be used to provide a reliable power supply for electronic devices, while also providing transient protection.
The working principle behind the operation of the MXLSMBJSAC8.0 application field is based upon the concept of combining two diodes that are in facing polarities. This will produce a reverse-biased diode junction that effectively clamps the voltage to a particular level, no matter how high the incoming voltage is. It will also provide protection against over-current, spikes, transients, and other threats with the same degree of effectiveness. This is done by the application of the Zener effect, which can be explained in greater detail through the use of breakdown voltages and saturation current.
First of all, the breakdown voltage is the point where the current flow begins to abruptly increase due to the Zener effect. In the MXLSMBJSAC8.0 application field, this voltage is set to the desired clamping level. Similarly, the saturation current is the point where the current flow is suddenly and drastically reduced. This acts as a safety feature, and it also helps to limit the extra current that the diode junction may otherwise draw from the power source.
Lastly, the MXLSMBJSAC8.0 also offers aesthetic protection, as it functions as a regular TVS diode while also providing a visually appealing and attractive look. This further helps to improve the overall aesthetic appeal of the system, and the MXLSMBJSAC8.0 is an ideal choice for systems that are both functional and aesthetically pleasing. Overall, it is quite clear that the MXLSMBJSAC8.0 is a great choice for TVS diode protection, as it offers integrated protection at a wide range of applications, while also offering an appealing look.
In conclusion, the MXLSMBJSAC8.0 application field is an integrated protection circuit device that is designed to protect systems from a wide array of hazards such as over-voltage, voltage transients, transients, noise, overload, and ground voltage. It works based upon the principle of combining two diodes that are in facing polarities, which produces a reverse-biased diode junction that effectively clamps the voltage to a particular level. Furthermore, it also offers aesthetic protection, as it functions as a regular TVS diode while also providing an attractive look. As such, it is without doubt a great choice for TVS diode protection, as it offers an integrated protection circuit at a wide range of applications, while also providing aesthetically pleasing and attractive visuals.
The specific data is subject to PDF, and the above content is for reference
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| MXLSMCG40AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCJLCE15A/TR | Microsemi Co... | 9.04 $ | 1000 | HI REL TVS |
| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
| MXLSMLJ15CAE3/TR | Microsemi Co... | 9.47 $ | 1000 | HI REL TVS |
| MXLSMCGLCE90A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCG33CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMBG7.0CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MXLSMCG58AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
| MXLSMCG64AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 64V 103V DO215A... |
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MXLSMBJSAC8.0 Datasheet/PDF