
MXLSMBJSAC8.5 Circuit Protection |
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Allicdata Part #: | 1086-11769-ND |
Manufacturer Part#: |
MXLSMBJSAC8.5 |
Price: | $ 8.23 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 8.5V 14V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 7.46914 |
Voltage - Clamping (Max) @ Ipp: | 14V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 30pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 34A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 9.44V |
Voltage - Reverse Standoff (Typ): | 8.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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In general, the TVS - Diodes category of components includes transient voltage suppressors, ESD protection devices, and surge arrestor diodes. The MXLSMBJSAC8.5 application field and working principle belongs to this category as it is used for ESD protection.
The ESD protection of the MXLSMBJSAC8.5 is provided by a pair of MOSFETs integrated circuits and a voltage clamp, which provide a high ESD immunity while maintaining excellent suppression performance. The device also includes an internal diode to prevent reverse voltage damage. This device operates in the range of 4 to 8.5 volts, with a maximum capacitance of 160pF.
The device operates as a transient voltage suppressor, providing ESD protection for system components. When a high voltage transient is applied to the terminals, the MOSFETs switch into saturation and conduct the ESD pulse current path to ground, thus limiting the exposed devices from being damaged.
The device also provides protection from electrostatic discharge, which can damage system components. When the ESD voltage exceeds the breakdown voltage of the device, the internal diode will form a low conductance path to provide a fast recovery for the pulse current. This action ensures that the circuit’s components will not be damaged by the ESD pulse current.
The device further provides protection from surge events. It is able to withstand surges up to 8.5V, ensuring the system is well protected from such events. The fast recovery time of the MOSFETs ensures that the system remains protected during surges in a timely manner.
Overall, the MXLSMBJSAC8.5 application field and working principle belongs to the TVS - Diodes category of components. It is used for ESD protection, providing a high ESD immunity, and is also capable of withstanding higher voltage transients and surge events. This device is beneficial for providing protection to system components from potential damage due to ESD, transients and surge events.
The specific data is subject to PDF, and the above content is for reference
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