MXLSMLJ11A Allicdata Electronics

MXLSMLJ11A Circuit Protection

Allicdata Part #:

1086-12507-ND

Manufacturer Part#:

MXLSMLJ11A

Price: $ 9.25
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 11V 18.2V DO214AB
More Detail: N/A
DataSheet: MXLSMLJ11A datasheetMXLSMLJ11A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 8.41162
Stock 1000Can Ship Immediately
$ 9.25
Specifications
Voltage - Clamping (Max) @ Ipp: 18.2V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 164.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressor) diodes are a type of device that works to protect electronic devices from excessively high voltage levels. The MXLSMLJ11A is a type of TVS diode specifically designed for protection against surges and electrostatic discharges (ESD). The MXLSMLJ11A diode is suitable for a variety of applications, due to its superior ESD protection performance and its wide operating temperature range.

The MXLSMLJ11A provides excellent protection against overvoltage transients, suggesting its application as a generic ESD protection diode. This type of diode can be used in a variety of applications, including telecommunications, consumer electronics, and automotive, as it is designed for high-performance ESD protection. The MXLSMLJ11A is designed with a low clamping voltage, making it suitable for use in tight spaces. The diode also has a low clamping voltage, such that it does not require a voltage surge to trigger the protective circuitry. Additionally, the device features a low capacitance, making it suitable for use in high-speed data transmission.

The working principle of the MXLSMLJ11A involves the use of a reverse breakdown voltage in order to protect the device from voltage transients, such as ESDs. When the voltage on the MXLSMLJ11A diode reaches its reverse breakdown voltage, it begins to conduct current through the device, thus providing a path for the transient voltage to be dissipated safely. The reverse breakdown voltage of the MXLSMLJ11A is typically between 6 and 8 volts, depending on the temperature of the device.

The MXLSMLJ11A contains a body diode that serves to provide a bypass path for the current when the diode begins to conduct. The body diode prevents the diode from entering into a “zener break”, where it would have difficulty dissipating the current. This provides superior ESD protection performance and ensures that the device can effectively suppress ESD with minimal power dissipation.

In summary, the MXLSMLJ11A is a type of TVS diode specifically designed to protect electronic devices from voltage transients, such as ESDs. It has a low reverse breakdown voltage, enabling the device to act as a protector without the need for voltage surge and has a low capacitance, allowing for high-speed signal transmission. Additionally, it features an integrated body diode, which serves to protect the diode from entering a “zener break”, thus providing superior ESD protection performance.

The specific data is subject to PDF, and the above content is for reference

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