
MXLSMLJ160A Circuit Protection |
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Allicdata Part #: | 1086-12539-ND |
Manufacturer Part#: |
MXLSMLJ160A |
Price: | $ 9.25 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 160V 259V DO214AB |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 8.41162 |
Voltage - Clamping (Max) @ Ipp: | 259V |
Supplier Device Package: | DO-214AB |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Current - Peak Pulse (10/1000µs): | 11.6A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 178V |
Voltage - Reverse Standoff (Typ): | 160V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes cover a wide array of semiconductor products which perform protective functions for different types of electrical components. MXLSMLJ160A is one of this type of products, and it is suitable for high frequency telecommunication lines, automotive systems, power supplies, and other applications as overvoltage protection.
The MXLSMLJ160A diode\'s structure consists of a silicon body epitaxially grown on a silicon area, with a pair of P+ regions forming a junction between the emitter and collector. The P+ regions and the base form a PN junction, which behaves like a Zener diode when the voltage across it is shifted significantly. The transistor configuration offers a low on-state voltage drop and a high-speed switching capability, allowing the MXLSMLJ160A diode to respond quickly to voltage fluctuations.
The working principle of the MXLSMLJ160A is based on an avalanche mode of operation, which works under the right voltage and temperature conditions. When the voltage across the diode reaches the breakdown voltage, the depletion region shrinks, and an avalanche of electrons crossing the junction results in a large current flow. The avalanche current is usually much higher than the nominal current that would pass through the diode under regular working conditions, which is known as the snap-back or clamping voltage.
The snap-back voltage of the MXLSMLJ160A usually ranges between 600 and 1500 volts for a typical device, and it is programmed by adjusting the bias current and temperature. A typical MXLSMLJ160A can handle up to 10 amperes of surge current, which makes it suitable for protecting sensitive components from voltage surges.
The main application field of the MXLSMLJ160A diode is overvoltage protection. This type of semiconductor device is mostly used in automotive industries, telecommunication lines, and power supplies. It is employed in order to protect sensitive components from voltage transient occurrences, such as line surges and electrostatic discharges. The device can be also used to tame heavy in rush currents, thus improving the reliability of the system.
In conclusion, the MXLSMLJ160A is a useful tool for furthering the safety and stability of electrical systems, and it is classified as a TVS - diode. Its ability to quickly switch between states and handle high levels of surge current makes it a preferred choice for many applications, including those in automotive, telecom, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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