MXLSMLJ33AE3 Allicdata Electronics

MXLSMLJ33AE3 Circuit Protection

Allicdata Part #:

1086-12584-ND

Manufacturer Part#:

MXLSMLJ33AE3

Price: $ 9.25
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33V 53.3V DO214AB
More Detail: N/A
DataSheet: MXLSMLJ33AE3 datasheetMXLSMLJ33AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 8.41162
Stock 1000Can Ship Immediately
$ 9.25
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 56.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

Transient Voltage Suppression (TVS) Diodes are specially designed to offer overvoltage protection which helps regulate overvoltage transients and guard against spikes for a wide range of applications. The MXLSMLJ33AE3 is a bidirectional TVS diode that is fabricated in a state-of-the-art low-capacitance technology and enclosed in a low-profile E3 package. This diode is ideal for ESD and EFT protection of sensitive components connected to data lines.

The MXLSMLJ33AE3 is part of Littelfuse’s leading line of suppression diode products. It has a working voltage of 33V, a maximum standoff voltage of 32V, a clamping voltage of 44V, and a peak static drain current of 37A. Additionally, this diode has a capacitance that varies between 0.34pF and 0.44pF, and a maximum ESD protection of 10kV.

This diode is designed to protect against transient pulses caused by lightning, inductive load switching, and electrostatic discharge. To do this, the diode features advanced dynamic resistance technology that helps protect against instantaneous high energy transients. Additionally, it features low capacitance, ESD robustness, high surge capability, and excellent clamping performance. This makes it ideal for protecting sensitive, high-speed communication lines.

The MXLSMLJ33AE3 is widely used in a variety of industries, such as automotive, consumer electronics, military, industrial electronics, and aerospace. It can be used to protect devices from overvoltage transients, spikes, and surges in sensitive electronic components. Additionally, this diode can be used to provide protection from electrostatic discharge (ESD) and electromagnetic interference (EMI).

The MXLSMLJ33AE3 diode is a bidirectional diode that has reverse leakage current that is less than 1nA. It works by clamping the voltage of a circuit to a certain voltage level and absorbing the excess energy from the current thereby protecting the component from damage. The diode is equipped with a reverse electrical breakdown property which helps it conduct current in the reverse direction when the voltage is high enough to form a reverse conduction channel. This allows the diode to provide a low impedance path for the discharge of excess electricity.

In summary, the MXLSMLJ33AE3 is a low-profile TVS diode that is designed to provide protection from overvoltage transients, spikes, and surges in sensitive electronic components. This diode is capable of providing excellent protection from ESD, EFT, and lightning, and is suitable for a wide variety of applications. It offers high surge capability, low capacitance, and excellent clamping performance, which makes it an ideal choice for protecting high speed communication systems.

The specific data is subject to PDF, and the above content is for reference

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