![MXLSMLJ45AE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MXLSMLJ45AE3 Circuit Protection |
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Allicdata Part #: | 1086-12600-ND |
Manufacturer Part#: |
MXLSMLJ45AE3 |
Price: | $ 9.25 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 45V 72.7V DO214AB |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 8.41162 |
Voltage - Clamping (Max) @ Ipp: | 72.7V |
Supplier Device Package: | DO-214AB |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Current - Peak Pulse (10/1000µs): | 41.2A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The high-performance TVS diodes, MXLSMLJ45AE3 is used in protection of electronic components from overvoltage transients caused by inductive switching and other high-energy events. Offered in the DO-218AB (SMA) SMD plastic package, this device is part of a broad family of high-speed diode TVS devices. With a low capacitance of 5 pF, it maintains signal integrity in high-speed data lines. Furthermore, its standoff voltage of 44 V is superior to many TVS diodes in this power range.
Now let us understand the application fields and working principles of the MXLSMLJ45AE3. To start with, the application field, this device offers protection for any a wide range of high-speed components such as processors, FPGAs, memory, and ASICs. It is also suitable for high-frequency, high-density boards, providing protection from voltage transients. This is really beneficial for small and compact electronic designs, such as handheld and wearable electronics, where board density and space are critical.
In terms of its working principle, MXLSMLJ45AE3 effectively limits transient overvoltage by providing a low impedance path to ground when the reverse voltage exceeds the rated breakdown voltage. This low impedance path ensures that the voltage across the device is kept at a safe level, and offers response times as low as 1 nanosecond, even with large transients. In addition, this device features low capacitance, which helps to maintain signal integrity.
The MXLSMLJ45AE3 also features superior thermal dissipation, which helps to protect against repetitive surge events. It features a peak power rating of 10W, and a maximum operating junction temperature of 175°C. This is a great advantage for applications that require high peak power and transient protection from repetitive surge events.
The MXLSMLJ45AE3 is an ideal solution for a wide range of applications such as power and battery switchgear, telecom systems, household appliances, automotive electronics, and industrial systems. Offering superior thermal dissipation, fast response times, and high peak power ratings, this device is a great choice for protection from overvoltage transients.
The specific data is subject to PDF, and the above content is for reference
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MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
MXLSMCJ150AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
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