MXLSMLJ75AE3 Allicdata Electronics

MXLSMLJ75AE3 Circuit Protection

Allicdata Part #:

1086-12652-ND

Manufacturer Part#:

MXLSMLJ75AE3

Price: $ 9.25
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 75V 121V DO214AB
More Detail: N/A
DataSheet: MXLSMLJ75AE3 datasheetMXLSMLJ75AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 8.41162
Stock 1000Can Ship Immediately
$ 9.25
Specifications
Voltage - Clamping (Max) @ Ipp: 121V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 24.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppression) diodes are essential components in overvoltage protection. The MXLSMLJ75AE3, specifically, is a protection semiconductor device with a low capacitance transient voltage suppressor diode array.

The MXLSMLJ75AE3 is designed to protect sensitive electronic systems from a variety of voltage transients, especially in applications such as communication systems, commercial systems, office automation machines, and automotive. It is suitable for up to 10kHz transients which have a peak amplitude of up to 18V.

The MXLSMLJ75AE3\'s components are made from silicon-based materials with an ultra-small package size, making it perfect for applications which require space efficiency. It also has a low maximum on-state resistance and a current derating temperature for high-current applications. It is also able to withstand a variety of transients and withstands electrostatic discharges up to 100pF.

The MXLSMLJ75AE3 has an operating temperature range of -55°C to 125°C, making it suitable for a wide range of operating temperatures and environments.

The working principle of the MXLSMLJ75AE3 is based on the Zener or avalanche breakdown of the diode junction, where the breakdown voltage of the device is determined by the temperature coefficient of the junction reference voltage. When the junction reference voltage is reached, a current will flow through the diode junction, which will be limited by the internal P-N junction resistance. This current causes the diode junction to reach a point of thermal equilibrium, thus suppressing the transient voltage.

The MXLSMLJ75AE3 also uses a voltage-clamping technique to protect sensitive electronic devices against transients. This technique allows the diode to temporarily resist and limit high voltage transients by clamping it to a preset level, allowing a safe, low voltage threshold to be maintained.

Overall, the MXLSMLJ75AE3 is an ideal protection device for applications which require space efficiency and a wide temperature range. It is able to suppress high voltages and limit current with a minimum of heat generation. Additionally, its low capacitance and avalanche breakdown characteristics make it an ideal choice for protecting against electrostatic discharges.

The specific data is subject to PDF, and the above content is for reference

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