MXP6KE75A Allicdata Electronics

MXP6KE75A Circuit Protection

Allicdata Part #:

1086-13159-ND

Manufacturer Part#:

MXP6KE75A

Price: $ 12.40
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 64.1V 103V T-18
More Detail: N/A
DataSheet: MXP6KE75A datasheetMXP6KE75A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.26970
Stock 1000Can Ship Immediately
$ 12.4
Specifications
Voltage - Clamping (Max) @ Ipp: 103V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 5.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MXP6KE75A is a TVS (Transient Voltage Suppressor) diode that provides high-performance protection for sensitive circuit boards. It is usually used to protect against ESD and EFT damage and other fast transients. The MXP6KE75A is a jumper diode with a breakdown voltage of 7.5V and a rated current of 61A. It is available in a SOT-23 package and is suitable for a variety of applications.

The MXP6KE75A has several features that make it an ideal choice for applications that require ESD protection. First, it has a very low clamping voltage, which is often measured at 7.5V. As a result, it is able to prevent voltage spikes from ESD and EFT events from reaching sensitive components on the board. The diode also has a very high rated surge current of 61A, which is able to handle fast transients with ease. Finally, the diode is available in a SOT-23 package, which provides high-density on the board.

The working principle of the MXP6KE75A is based on the P-N junction diode principle. The diode consists of a heavily doped N-type “below” region and a lightly-doped P-type “above” region. When a voltage is applied to the diode, it will be able to surpass the PN junction and allow current to flow through. If the voltage exceeds the rated breakdown voltage of 7.5V, then the diode will break down and clamp the voltage, preventing it from reaching delicate components on the board.

The MXP6KE75A has been designed for a variety of applications including, automotive, communication systems, and consumer electronics. In automotive applications, it is used to protect circuit boards from damaging ESD and EFT events. In communication systems, it is often used to protect sensitive components from voltage spikes and transients. In consumer electronics, it is often used in high-end audio systems and other sensitive equipment to provide ESD and EFT protection.

In conclusion, the MXP6KE75A is a high-performance TVS diode that provides robust protection for circuit boards from ESD and EFT events. It has a very low clamping voltage, a high rated surge current, and a small package size, making it an ideal choice for a variety of applications. Its working principle is based on the PN junction diode, where it will break down and clamp the voltage above its rated breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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