MXPLAD18KP8.5A Allicdata Electronics
Allicdata Part #:

MXPLAD18KP8.5A-ND

Manufacturer Part#:

MXPLAD18KP8.5A

Price: $ 38.65
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 85V 137V PLAD
More Detail: N/A
DataSheet: MXPLAD18KP8.5A datasheetMXPLAD18KP8.5A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 35.14180
Stock 1000Can Ship Immediately
$ 38.65
Specifications
Current - Peak Pulse (10/1000µs): 132A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 18000W (18kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Voltage - Reverse Standoff (Typ): 85V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressor) diodes are widely used in a variety of applications to protect items such as electronic systems and components from voltage transients. These devices use an avalanche breakdown effect to clamp and divert the transient energy away, affording protection from voltage spikes and inductive kick-backs that may otherwise cause permanent damage. The MXPLAD18KP8.5A is a particularly popular TVS diode from ON Semiconductor, and is suitable for protecting sample-and-hold circuits and other sensitive analogue applications in automotive environments.

The MXPLAD18KP8.5A is an ultra-low capacitance, bidirectional TVS diode featuring two high-power discrete diodes in an SMB package. It provides multilateral ESD protection up to 27kV, and is ultra-low capacitance, with a maximum capacitance of 0.2pF at 1MHz. This diode offers superior protection from EOS Electro-Static Discharge damage, and is rated for maximum EOS (Electrical Over-Stress) voltage levels of up to 18V.

The working principle behind the MXPLAD18KP8.5A lies in its ability to quickly divert surge energy away from electronic circuits via an avalanche breakdown effect. This occurs when the diode is subjected to a high voltage, resulting in an extreme increase in the current passing through the diode. This rapid increase in current causes electrons to gain enough energy for some of them to escape from their host atoms, and these newly freed electrons collide with other atoms. This, in turn, increases the number of electrons that flow through the diode, causing a further increase in the current. This phenomenon is known as avalanche breakdown, and it creates a path for the transient voltage to be diverted away from the protected circuitry.

This capability of the MXPLAD18KP8.5A makes it ideal for protecting automobiles from transient voltage spikes and inductive kick-backs, as well as providing ESD protection up to 27kV. It is a popular choice for automotive applications such as sample-and-hold circuits and other sensitive analogue applications that may otherwise be prone to permanent damage. In addition, the MXPLAD18KP8.5A also offers superior protection from EOS Electro-Static Discharge damage, allowing it to withstand maximum EOS (Electrical Over-Stress) voltage levels of up to 18V.

The MXPLAD18KP8.5A has established itself as a popular choice of TVS diode. It is designed to protect delicate and sensitive automotive applications from transient voltage spikes and inductive kick-backs, as well as offering excellent ESD protection. The diode’s capability to divert transient energy away from protected circuits by an avalanche breakdown effect has allowed it to become a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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