
Allicdata Part #: | 766-1037-ND |
Manufacturer Part#: |
N04L63W1AT27I |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC SRAM 4M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | N04L63W1A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
N04L63W1AT27I is a type of memory that has been developed for use in a wide range of applications. The memory is composed of an advanced cell architecture, which is designed to provide high speed read-write operation with low power consumption and robust data protection for mission critical applications. The memory also offers low latency and high reliability, making it an ideal choice for any application that requires high performance and reliability.
The N04L63W1AT27I memory uses a three-dimensional array with a wide diffusion area to ensure low read-write latency. The cells in the array are composed of different structures and materials that are engineered to optimize performance and reduce power consumption while maintaining the highest level of data protection. The cells are connected to a range of logic gates that enable the memory to quickly store and retrieve data.
The N04L63W1AT27I memory also provides support for error correction and redundancy, making it a robust and highly reliable solution for mission critical applications. The memory can also be programmed with error-detection algorithms to detect and correct errors, which helps to improve system reliability and reduce the risk of data loss. The memory also features an ECC (Error Correcting Code) to provide additional protection against data corruption.
The N04L63W1AT27I memory is suitable for use in a wide range of applications, including embedded systems, automotive, industrial, and military applications. It is also suitable for use in high-performance computing systems, such as server farms, where it can provide reliable data storage and retrieval. The memory also has a range of features that make it suitable for use in mobile applications.
The N04L63W1AT27I memory is an ideal solution for applications that require high performance, robust data protection, and low power consumption. The advanced cell architecture and wide range of features make it a versatile and reliable memory solution for a variety of applications. It is capable of providing high speed operation, low latency, and high reliability, making it an excellent choice for mission critical applications.
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