N04L63W2AB27I

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1. Describe

N04L63W2AB27I is an integrated storage device Contains a 4 Mbit static random access memory Organized into 262,144 words in 16 bits. Device Design and manufacture with ON Semiconductor advanced CMOS technology Provides high-speed performance and ultra-low strength. The device uses two chip enable (CE1 and CE2) Control and output enable (OE) to Allows easy memory expansion. Byte control (UB and LB) High byte and low byte allowed Independent access, can also be used for Deselect the device. N04L63W2A is the best choice Suitable for various applications where low power consumption is critical For example, spare batteries and handheld devices. The device can operate in a wide range The temperature range is -40oC to +85oC, and is Provide a package compatible with JEDEC standards Compared with other standards 256Kb x 16 SRAM

2. Feature

    1. Single wide power supply range: 2.3 to 3.6 volts

    2. Very low standby current: 4.0µA (typical value) at 3.0V

    3. Very low working current: 2.0mA (typical value) at 3.0V and 1µs

    4. Very low page mode operating current: 0.8mA (typical value) at 3.0V and 1µs

    5. Simple memory control Dual chip enable (CE1 and CE2) Output enable (OE) for memory expansion

    6. Low voltage data retention: Vcc = 1.8V

    7. Very fast output enable access time: 25ns OE access time

    8. Automatically power off to standby mode

    9. TTL compatible three-state output driver

  10. Provide a compact and space-saving BGA package

3. Pin Configuration

4. Pin Descriptions