N04L63W2AT27IT Allicdata Electronics
Allicdata Part #:

N04L63W2AT27IT-ND

Manufacturer Part#:

N04L63W2AT27IT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: N04L63W2AT27IT datasheetN04L63W2AT27IT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: N04L63W2A
Description

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N04L63W2AT27IT memory is a new type of memory developed by technology companies, with a wide range of applications and great potential for innovation. N04L63W2AT27IT memory is a non-volatile Flash memory, which is commonly used in consumer electronics, embedded systems and industrial applications. It is commonly used in consumer electronics storage, such as mobile phones, digital cameras and other mobile devices. It is also used in embedded systems, such as in automobile engine electronics, medical instrumentation and consumer products. In industrial applications, it is frequently used in industrial data logging, information processing and industrial control systems. The N04L63W2AT27IT memory has several features that make it an appealing choice for a wide variety of applications. It has a high speed read/write capability, low power consumption, low cost, and higher endurance. It is also highly reliable and provides error-correcting code (ECC) support, allowing it to store data even in the event of a data error occurring. Another benefit of this memory is its ability to execute in-system programming (ISP), which allows the user to make changes to the memory without the need of an external programmer. The working principle of N04L63W2AT27IT memory is based on a three-transistor cell, which is composed of a NAND cell, a NOR cell and a fuse cell. The NAND cell stores 0 data bits and the NOR cell stores 1 data bits. The fuse cell controls the selection of either the NAND or NOR cell through the programming voltage. When the voltage is applied to the fuse cell, the selection is made and the data is stored in either the NAND or the NOR cell. N04L63W2AT27IT memory is an attractive choice for many applications because of its cost efficiency, low power consumption, fast read/write speed, high endurance and its ability to execute ISP. It also provides ECC support and is highly reliable. These features make it a popular choice for many embedded applications, as well as for industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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