NCD5701CDR2G Allicdata Electronics
Allicdata Part #:

NCD5701CDR2GOSTR-ND

Manufacturer Part#:

NCD5701CDR2G

Price: $ 0.60
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: HIGH CURRENT IGBT GATE DRIVER
More Detail: High-Side or Low-Side Gate Driver IC 8-SOIC
DataSheet: NCD5701CDR2G datasheetNCD5701CDR2G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.54432
5000 +: $ 0.52416
12500 +: $ 0.50400
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: NCD5701
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 20V
Logic Voltage - VIL, VIH: --
Current - Peak Output (Source, Sink): 7.8A, 6.8A
Input Type: --
Rise / Fall Time (Typ): 18ns, 19ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The NCD5701CDR2G gate driver is a PWM-controlled gate driver with very low noise, good EMC, over-voltage and over-temperature protection. It can be used in automotive, industrial and consumer electronics applications that require very low noise switching. The design of the NCD5701CDR2G gate driver allows it to be used in applications with low gate capacitance, high switching frequency, fast switching speed and relatively low voltage.

Application Field

The NCD5701CDR2G gate driver is commonly used in automotive, industrial and consumer electronics applications for applications such as motor control, power conversion, DC/DC conversion, power amplifier and AC power control, as well as for any application requiring fast, low-noise switching. The driver is suitable for driving a wide variety of P-MOSFETs and IGBTs.

The NCD5701CDR2G gate driver is an ideal solution for systems where low noise is critical, such as in motor control and power conversion. The low noise generated by this driver is great for keeping system noise levels low and providing excellent EMC performance. The driver is capable of driving both low-side and high-side IGBTs/MOSFETs.

The performance and features of the NCD5701CDR2G gate driver make it well suited for use in applications that require high speed and low noise switching, such as automotive, industrial and consumer electronics.

Working Principle

The NCD5701CDR2G gate driver is based on a PWM control architecture that enables the gate driver to achieve very low noise performance. The PWM signal is used to control the voltage at the gate of the MOSFET. The signal passes through an internal driver IC, which amplifies the signal and drives the MOSFET gate voltage.

The NCD5701CDR2G gate driver features a constant frequency PWM control that provides fast and accurate control of the gate voltage of the MOSFET. This PWM control reduces the switching noise by digitally controlling the gate voltage level. Additionally, the gate driver keeps the gate voltage level low during the PWM off-time to reduce switching noise and minimize the switching losses during the off-time.

The NCD5701CDR2G gate driver also offers adjustable over-voltage protection, adjustable over-temperature protection, and adjustable overload current protection. This allows the gate driver to safely operate even in high-temperature environments and provide reliable gate control without any risk of damage.

In addition to its low-noise characteristics, the NCD5701CDR2G gate driver also offers high switching speed and is capable of operating at frequencies up to 20 MHz. The high switching speed allows the system to respond quickly and accurately to changes in voltage.

In summary, the NCD5701CDR2G gate driver is an ideal solution for automotive, industrial and consumer electronics applications that require fast, low-noise switching. The adjustable protection features and the high frequency operation capabilities make the driver well-suited for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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