NDC7001C Allicdata Electronics

NDC7001C Discrete Semiconductor Products

Allicdata Part #:

NDC7001CTR-ND

Manufacturer Part#:

NDC7001C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 60V SSOT6
More Detail: Mosfet Array N and P-Channel 60V 510mA, 340mA 700m...
DataSheet: NDC7001C datasheetNDC7001C Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Description

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NDC7001C is a type of NMOS transistor array that has been widely used in discrete or high-volume applications like amplifiers, switching circuits, and power amplifiers. It is a 4-channel transistor array, where each channel has two input pins and two output pins. Each channel also has a current source and a voltage source, with the two sources being connected in parallel. The NDC7001C is also available in a 8-channel transistor array, which is a higher voltage version of the 4-channel transistor array and has twice the number of gates in each channel.

The main application fields for the NDC7001C are in discrete netlist applications and high-performance application-specific integrated circuits (ASICs). It is commonly used in amplifiers, switching circuits, and power amplifiers. The NDC7001C is also used in various other applications such as radio frequency (RF) circuit design, mixed-signal analog circuits, and power management solutions.

The working principle of the NDC7001C is based on the principle of n-type metal-oxide-semiconductor (NMOS) transistor array. This type of transistor array utilizes the use of n-type semiconductor materials, where electrons are injected into a channel region between the source and drain terminals and form a channel for current flow. The current flows through the channel until the channel if fully depleted and the transistor is turned off.

The NDC7001C utilizes this NMOS array principle to provide a wide range of features, including low noise, high speed, low power, and wide dynamic range. The low noise design helps with avoiding cross-talk between signals, while the high speed allows for faster operation. The low power consumption reduces the amount of energy required, and the wide dynamic range allows for better performance in high-frequency applications.

The NDC7001C is also designed to be a flexible platform, with a wide range of support components available. These support components include an input/output circuit, an amplifier circuit, a mixer circuit, a transceiver circuit, a power management circuit, and a voltage regulation circuit. The NDC7001C also comes with a variety of interfaces, such as digital logic, RF, and analog interfaces.

Overall, the NDC7001C is a great choice for high-performance applications. Its array structure offers a wide range of features, and its flexibility allows for easy integration into existing circuits. With its low noise, high speed, low power, and wide dynamic range, the NDC7001C is an ideal choice for high-performance circuit designs.

The specific data is subject to PDF, and the above content is for reference

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