Allicdata Part #: | NESG2046M33-T3-A-ND |
Manufacturer Part#: |
NESG2046M33-T3-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | TRANS NPN 2GHZ M33 |
More Detail: | RF Transistor NPN 5V 40mA 18GHz 130mW Surface Moun... |
DataSheet: | NESG2046M33-T3-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 18GHz |
Noise Figure (dB Typ @ f): | 0.8dB ~ 1.5dB @ 2GHz |
Gain: | 9.5dB ~ 11.5dB |
Power - Max: | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 2mA, 1V |
Current - Collector (Ic) (Max): | 40mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-SuperMiniMold (M33) |
Base Part Number: | NESG2046 |
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The NESG2046M33-T3-A is a RF bipolar (BJT) transistor, designed to quickly and efficiently amplify signals in a wide range of applications. It is designed to provide excellent performance in terms of linearity, stability and power output. The device is offered in the three-pole, SC-70 package and offers superior thermal performance.
The NESG2046M33-T3-A can be used for a variety of applications, ranging from antenna amplifiers and mixers, as well as in power amplifiers, power management systems and general purpose linear amplifiers. It is also suitable for a variety of wideband receiving applications such as radar, ultra-wideband and satellite receivers.
The working principle of the NESG2046M33-T3-A is based on its amplifying capabilities. The device has an active component, which is the base, and two additional input and output terminals. The base is connected to a dc power source and the two output leads are connected to the input and output signals for which the device is amplifying. The signal current at the output is proportional to the signal current at the input.
The device has an emitter-follower configuration, in which the base voltage is always negative, which results in less distortion and improved linearity. The device also features a differential input and feedback, which allows it to be used as a differential amplifier, attenuator and matching network. The device also has built-in biasing and flat gain frequency response.
The NESG2046M33-T3-A can operate up to a maximum frequency of 500 MHz, which makes it suitable for a wide range of applications. The device also features high power gain and is capable of delivering up to 25 dB of gain. The device has an operating voltage range of 15V to 100V and can deliver power up to 1.8W. Furthermore, the device also has excellent thermal performance and can operate in temperatures ranging from -55°C to +150°C.
In conclusion, the NESG2046M33-T3-A is an excellent RF bipolar (BJT) transistor that offers a wide range of capabilities and can be used for a variety of low to high power amplifier applications. The device offers high power gain, excellent linearity and wide operating temperature range, which makes it suitable for use in a variety of applications. Therefore, the device is an ideal choice for a variety of applications, ranging from antenna amplifiers and mixers, to power amplifiers, power management systems and general purpose linear amplifiers.
The specific data is subject to PDF, and the above content is for reference
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