NESG2107M33-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	10GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.5dB @ 2GHz
Gain:	7dB ~ 10dB
Power - Max:	130mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 5mA, 1V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	3-SuperMiniMold (M33)
Base Part Number:	NESG2107

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Introduction

The NEG2107M33-A is an RF transistor designed for use in RF applications and expertly engineered for exceptional performance. It is ideally suited for use in high frequency applications and offers the highest levels of accuracy and efficiency. The transistor is manufactured using a bipolar junction transistor (BJT) technology, allowing for excellent performance in wireless communication systems and other RF applications that require reliable and consistent operation.

Applications

The NEG2107M33-A is ideally suited for use in RF communication systems. It is a high-performance transistor that is suitable for use in applications such as base station amplifiers, transceivers, and power amplifiers. Additionally, the transistor is also ideal for use in Wi-Fi and Bluetooth systems and other applications that require reliable and efficient operation in the high frequency ranges.

Features

The NEG2107M33-A offers a number of advantages over other RF transistors. It is extremely fast-switching, with a switching frequency of up to 10 GHz, and offers excellent noise suppression performance. The transistor also offers great linearity, allowing for reliable operation with low distortion levels. Additionally, the transistor has a very low voltage drop and consumes very little power, making it an ideal choice for applications that require a low power budget.

Working Principle

The working principle of the NEG2107M33-A RF transistor is based on BJT technology. An electric field is generated between a collector and an emitter, allowing electrons from the collector to flow across the base. This current flow is regulated by the bias voltage, which is applied to the base, controlling the current flow between the collector and the emitter. As the current flow increases, the collector voltage will start to rise and the current gain of the transistor will reach its peak.

Conclusion

The NEG2107M33-A is an excellent RF transistor that is ideal for use in high-frequency applications. It offers great performance, with fast-switching capabilities, low power consumption, and excellent linearity. Additionally, the transistor is based on BJT technology, allowing for great efficiency and reliable operation. This makes it an ideal choice for wireless communication systems, Wi-Fi and Bluetooth systems, and other applications that require reliable and consistent operation in the high frequency range.

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