NESG2101M05-A

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The NESG2101M05-A is an NPN-type bipolar transistor intended for radio frequency (RF) operations. It is suitable for small signal (low-power) radio communication applications such as amplifying of signals or controlling of power signals. This device is capable of a wide range of frequencies, up to 1100 MHz, with a maximum continuous collector and maximum intermittent collector current of 2 A. It is manufactured using bipolar technology, which allows for high-frequency, low-current operation. Due to its low noise characteristics, it is ideal for low-noise input and output stages for various amplifiers and signal processors.

The NESG2101M05-A contains one NPN-type bipolar transistor in a small 4-pin surface mount package. It consists of three terminals, base, collector and emitter, which are connected by a thin, semiconductor layer. The base is the control terminal, while the collector and emitter are the output and input terminals, respectively. The transistor acts as an amplifier and is primarily used to control the voltage and current flow between the collector and emitter, allowing a signal to be amplified. The gain of the device is determined by the current ratio between the base and collector. The current ratio is commonly referred to as the h-parameter and is measured in mA/V.

The device can be operated in either an active or a saturation mode, with the CHO parameter indicating the mode of operation. In the active mode, the current voltage is determined by the h-parameter ratio and the collector current, while in the saturation mode, the voltage drop across the device is lower. Since the device is a low-power device, in the active mode, it is necessary to limit the current and voltage to ensure the device is not damaged. The maximum collector current and voltage should be kept below the specified values.

The NESG2101M05-A offers a maximum collector-emitter breakdown voltage of 17 V, while its collector-base breakdown voltage is much higher at 85 V. It also has a minimum transition frequency of 8 MHz and a maximum frequency of 1100 MHz. The device is also compatible with lead free soldering processes, allowing for easy and quick assembly. Furthermore, the NESG2101M05-A transistor is made of epitaxial silicon, which provides extremely low noise and distortion of signals.

In conclusion, the NESG2101M05-A is an NPN-type bipolar transistor intended for radio frequency (RF) operations. Its wide range of frequencies and low noise properties make it well suited for most RF-related applications. Its small form factor makes it suitable for tight spaces and its lead-free solderability allows for quick and easy assembly. Its collector-emitter breakdown voltage and collector-base breakdown voltage are both exceptionally high and its minimum transition frequency is up to 8 MHz, making it well suited for a wide range of applications.

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