NJG1159PHH-TE1 RF/IF and RFID |
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Allicdata Part #: | NJG1159PHH-TE1TR-ND |
Manufacturer Part#: |
NJG1159PHH-TE1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NJR Corporation/NJRC |
Short Description: | FRONT END MODULE GPS/GLONASS |
More Detail: | RF Amplifier IC Galileo, GLONASS, GPS 1.575GHz, 1.... |
DataSheet: | NJG1159PHH-TE1 Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 1.575GHz, 1.602GHz |
P1dB: | -- |
Gain: | 16dB |
Noise Figure: | 1.7dB |
RF Type: | Galileo, GLONASS, GPS |
Voltage - Supply: | 1.5 V ~ 3.3 V |
Current - Supply: | 3.7mA |
Test Frequency: | -- |
Package / Case: | Module |
Supplier Device Package: | Module |
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RF Amplifiers
The NJG1159PHH-TE1 RF Amplifier is a highly integrated single channel Amplifier IC designed for various applications such as industrial measurement, medical imaging systems, satellite communications systems and automotive radar systems. It is suitable for a wide range of frequency bands from 600 MHz to 6 GHz, and consists of a low-noise amplifier (LNA) and a power amplifier (PA).
Application field and working principle
The NJG1159PHH-TE1 is a single-channel RF Amplifier IC designed to operate in a wide range of frequency bands from 600MHz to 6GHz. It is ideal for applications such as industrial measurement, medical imaging systems, satellite communications systems and automotive radar systems. The NJG1159PHH-TE1 works by first amplifying a radio-frequency (RF) signal through its low-noise amplifier (LNA). This amplified signal is then passed through the power amplifier (PA), which further increases the gain and power of the signal. The NJG1159PHH-TE1 can provide a maximum gain of up to 23 dB with a linearity of 36 dB at a power supply voltage of only 0.9V.
The NJG1159PHH-TE1 is designed to provide an outstanding balance between linearity, gain, and power efficiency. The high linearity is achieved by using a combination of high gain P-channel MOSFETs and high gain N-channel depletion mode MOSFETs to achieve the maximum linearity with minimum drive. The NJG1159PHH-TE1 also provides better linearity compared to traditional single-stage amplifiers, which are limited by the closed-loop gain of the amplifier. Additionally, the high-efficiency power amplifier is capable of providing stable power output with minimal noise when operated at the appropriate voltage range.
The NJG1159PHH-TE1 is a highly integrated single-channel Amplifier IC featuring excellent ruggedness and user-friendly programming. It features reduced noise levels and higher output power, which makes it suitable for high-volume applications demanding a high-performance amplifier. The NJG1159PHH-TE1 is also highly resistant to temperature variations, shock, and vibrations, making it suitable for industrial applications.
In conclusion, the NJG1159PHH-TE1 is a highly integrated single-channel RF Amplifier IC that provides an outstanding balance between linearity, gain, and power efficiency for a wide range of applications. It is designed to provide stable power output while offering a high level of ruggedness and user-friendly programming capability. The NJG1159PHH-TE1 is an ideal choice for high-volume applications that require a high-performance amplifier with minimal noise levels.
The specific data is subject to PDF, and the above content is for reference
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