NJT4030PT3G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 1V
Power - Max:	2W
Frequency - Transition:	160MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	NJT4030

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NJT 4030PT3G transistor is a common single-junction bipolar transistor produced by New Japan Radio Co., Ltd. The device is effective for analog and digital applications, especially in integrated circuits like digital to analog converters and radio frequency (RF) power amplifiers. The NJT 4030PT3G can also be used in power management systems and power conditioning applications.The NJT 4030PT3G is specially designed for use in portable and low-power devices. Its small size and low power consumption make it ideal for miniaturized computing applications. It is also ideal for high-frequency applications like RF amplifiers, wide-band gap (WBG) power amplifiers, and high-speed switching. Its high-voltage and high-frequency characteristics make it well suited for use in advanced CMOS integrated circuits (ICs). The NJT 4030PT3G transistor is a bipolar single-junction transistor. It has high gain and low noise characteristics, which make it an ideal device for analog and digital circuits. Its operating voltage is rated between 3.3V and 6.2V, so it can be used in applications requiring higher power. The current gain (hFE) ranges from 200 to 500 depending on the collector current applied. Moreover, it has a very low collector-emitter saturation voltage (Vce sat) of 0.6V. The device is capable of providing high-power amplification and efficient switching, making it suitable for various applications.The NJT 4030PT3G operates according to the principle of a combination of collector-emitter and base-collector junction currents. By adjusting the base current, the collector-emitter current is determined. This current is then amplified through the collector-emitter junction. The gain of the transistor is determined by the ratio of the collector-emitter currents. In addition, the NJT 4030PT3G transistor is capable of supplying high frequency signals up to tens of meghertz with high-speed switching. The device is also highly compatible with integrated circuits (ICs), making it ideal for use in applications such as radio frequency (RF) power amplifiers and Widebandgap power amplifiers (WBGA). Furthermore, its linear gain characteristics allow it to be used in analog circuits such as digital-to-analog converters (DACs).NJT 4030PT3G transistors can be used in a wide range of applications in consumer electronics, medical equipment, automotive electronics, and communication systems. The devices are mostly used as power management systems in portable battery-powered devices and as high-power amplifiers in communications systems. Its wide voltage and current range, high gain characteristics, and linear gain behavior make it a suitable device for these applications. Overall, the NJT 4030PT3G is a reliable and versatile single-junction bipolar transistor. It has a high current gain, low saturation voltage, and excellent linear gain characteristics, which make it well-suited for various applications such as power management systems and high-power amplifiers. Its small size and low power consumption also make it an ideal choice for miniaturized computing and portable applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description