NJT4031NT3G Discrete Semiconductor Products

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NJT4031NT3G Application Field and Working Principle

The NJT4031NT3G is a single transistor, which belongs to a type of bipolar transistor called BJT stands for Bipolar Junction Transistor. NJT4031NT3G is small signal transistor suitable for general purpose amplifier and switching applications. This small signal transistor with low collector-emitter saturation voltage VCE(sat) is designed for use with the Logic Level applications and other low level signals.

Characteristics of NJT4031NT3G

NJT4031NT3G features a high frequency current gain of hFE ranging from 10 to 130 at 1.0V and IC = 10mA, collector-emitter breakdown voltage of V(BR)CEO = 40V and an ESD rating of 2kV and a maximum operating temperature of +150°. It also has an ultrafast recovery time (tR < 0.5 ns) which makes it ideal for high-speed switching applications.The DC current gain ranges is 10 to 130 at collector current of IC = 10mA. The low collector-emitter saturation voltage allows for fast switching applications.

Applications of NJT4031NT3G

The NJT4031NT3G has a wide range of application. The ultrafast switching time makes it ideal for high-speed data transmission applications such as those found in computer and networking devices. It\'s low collector-emitter saturation voltage makes it suitable for switching operational amplifiers. It is also suitable for general purpose digital logic applications such as logic level converters and logic level multiplexers. Other common applications include low Frequency preamplifier circuit, ASIC design and Class-D Amplifier.

Working Principle of NJT4031NT3G

A transistor is made up of two terminals: Base and Collector. The base terminal is used to control the emitting current from the collector terminal. The strength of the current flowing from the collector is directly proportional to the current flowing in the base terminal. When the current in the base terminal increases, the current flow in the collector terminal also increases.

The NJT4031NT3G has an hFE ranging from 10 to 130 at 1.0V and IC = 10mA and a maximum operating temperature of +150°. When the current in the base terminal increases, the current flow in the collector terminal also increases and it creates a voltage at the collector-emitter terminal (VCE). When the current in the base terminal increases, the VCE gradually decreases and reaches a certain level called collectorsaturation voltage VCE(sat). At this point, the current flowing in the collector is at its maximum capacity.

In saturated region, the collector current does not increases any further and the collector current is limited to the saturation current ICSAT. When the base current is removed, the collector current continues to flow until the collector-emitter voltage reaches a stable level. The operating temperature of NJT4031NT3G increases as the frequency of operation increases. This increases its collector-emitter saturation voltage.

Conclusion

NJT4031NT3G is a single transistor, belongs to BJT family. It features a high frequency current gain of hFE and low collector-emitter saturation voltage VCE(sat). The NJT4031NT3G has a wide range of application in various data transmission, logic level converters, low frequency preamplifier circuit, ASIC design and class-D amplifier applications. The working principle of the NJT4031NT3G is based on the fact that when the current in the base terminal increases, the current flow in the collector terminal also increases and it creates a voltage at the collector-emitter terminal.

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