Allicdata Part #: | NJVNJD35N04G-ND |
Manufacturer Part#: |
NJVNJD35N04G |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 4A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 4A ... |
DataSheet: | NJVNJD35N04G Datasheet/PDF |
Quantity: | 600 |
1 +: | $ 0.57960 |
75 +: | $ 0.49434 |
150 +: | $ 0.40605 |
525 +: | $ 0.33545 |
1050 +: | $ 0.26483 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 20mA, 2A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 2A, 2V |
Power - Max: | 45W |
Frequency - Transition: | 90MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | NJD35N04 |
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The New Japan Vacuum N-channel Junction Field Effect Transistor, known as NJVNJD35N04G, is a single bipolar junction transistor (BJT), which is used as an amplifier in modern audio amplifiers as well as other circuits such as radio transmitters and receivers.
This transistor has an N-type source and a P-type drain, with two metal contacts between them. The source is connected to the positive voltage, while the drain is connected to the negative voltage. Between the source and the drain is a PN junction (gate) where the current conducts. The current flow is regulated by the amount of voltage applied to the gate, which is controlled by the amount of current flowing through the transistor.
The NJVNJD35N04G also has a collector, which is connected to the source, and an emitter, which is connected to the drain. A positive voltage is applied to the collector, while the emitter is connected to the negative voltage. These two points are the two main current terminals. The collector and the emitter are also the two resistor terminals. The resistance between the collector and the emitter is called the base emitter resistance, which can be adjusted to control the current flow through the transistor. This is the main principle used in BJT transistors.
The NJVNJD35N04G is used in the fields of audio amplifiers, amplifiers for digital signals, power supply voltage regulators, frequency converters, and many other applications where the transistor\'s current control capability is critical. The transistor can be used to manufacture audio amplifiers, voltage regulators, frequency converters and analog amplifiers. It is also an ideal choice for high-power switching applications.
The NJVNJD35N04G is a versatile device and can be used in a variety of applications. In audio amplifiers, it is used to design amplifiers that can produce a high quality sound. In voltage regulators, it is used to control the voltage supplied to a circuit in order to maintain its proper functioning. In frequency converters, it is used to convert a signal from one frequency to another. In analog amplifiers, it is used to increase the signal power before it is sent to the output.
In conclusion, the NJVNJD35N04G is a single bipolar junction transistor (BJT) with an N-type source, a P-type drain, two metal contacts, a collector (connected to the source) and an emitter (connected to the drain). The current is regulated by the voltage applied to the gate, and the resistance between the collector and the emitter can be adjusted to control the current flow. The transistor is used in applications such as audio amplifiers, voltage regulators, frequency converters, and analog amplifiers.
The specific data is subject to PDF, and the above content is for reference
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