NJVNJD35N04T4G Discrete Semiconductor Products

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Introduction

NJVN JD35N04T4G is a type of bipolar junction transistor (BJT). BJTs are semiconductor devices that are commonly used as switches or amplifying elements, and they operate on the principle of current control. The NJVN JD35N04T4G is a single BJT that is designed for low-voltage, high-current switching and amplify applications. It is typically used in power electronics and consumer electronics, such as computers, audio systems, and more.

Features and Specs

NJVN JD35N04T4G is a single, NPN type transistors with a high power rating of 1.4 Amp. It has a low conductivity of less than 1.2 milliohm. The maximum collector current of the NJVN JD35N04T4G is 75 mA. This transistor has high breakdown voltage of 60 volts and can operate over a wide temperature range from -55 to 150 degrees Celsius.

The NJVN JD35N04T4G also has a high switching speed of 15 nanoseconds and a high transition frequency of 5 MHz. The transistor has a diode protection rating of 200mW and a package size of 2mm x 3mm. It can handle high power dissipation of up to 200 watts.

Application Field and Working Principle

NJVN JD35N04T4G transistors are used in various power electronics and consumer electronics applications such as power supply drivers, amplifiers, motor control circuits and drivers, D-A converters, and more. The transistors are also used for digital signal processing, TV and radio broadcasting, thermal heating elements, and other switching applications.

NJVN JD35N04T4G transistors are typically used to switch or amplify electrical signals in a controlled manner. It works on the principle of current control, where the collector current of the transistor can be produced or amplified by supplying the correct base current to the transistor. In NPN BJT type transistors, the collector current is amplified by applying a positive biasing voltage to the base terminal.

The collector and emitter terminals of the transistor are reverse biased in the off condition and forward biased in the on condition. When the base current is increased, the collector current is also increased, which produces an amplified signal. When the base current is decreased, the collector current is also decreased, which results in the transistor being turned off. This is the working principle of NJVN JD35N04T4G transistors.

Conclusion

NJVN JD35N04T4G are high power, single BJT transistors used in various power electronics and consumer electronics applications. They operate on the principle of current control, where the collector current of the transistor can be amplified or decreased by varying the voltage applied to its base. In NPN type transistors, the collector current is increased when the base voltage is positive and decreased when the base voltage is negative. NJVN JD35N04T4G transistors feature high switching speed, high transition frequency, and high power dissipation capability.

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