Allicdata Part #: | NJW0281GOS-ND |
Manufacturer Part#: |
NJW0281G |
Price: | $ 1.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 15A TO-3P |
More Detail: | Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W T... |
DataSheet: | NJW0281G Datasheet/PDF |
Quantity: | 216 |
1 +: | $ 1.65690 |
10 +: | $ 1.48995 |
100 +: | $ 1.19763 |
500 +: | $ 0.98398 |
1000 +: | $ 0.81530 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 500mA, 5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 3A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P-3L |
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The NJW0281G is a Bipolar Junction Transistor (BJT) designed for use in audio amplification. Typically, this device is used as a driver transistor in audio amplifiers, drivers, radio receivers, pre-amps, and other applications where transient response time is important.
A bipolar junction transistor is a three-terminal, unidirectional solid state device made of semiconductor material. It has two distinct junctions – an emitter-base and a collector-base junction. The device is operated by controlling the amount of current flow through the emitter-base junction. This is done by changing the voltage at the emitter terminal, which in turn affects the current flowing through the emitter-base junction.
The NJW0281G device has a current gain (hFE) of 1000 mA or greater, making it suitable for audio amplification applications. The device also has a low input capacitance of 0.046 pF, making it suitable for high-frequency applications. The device is rated for a collector-emitter voltage of 25 volts and a collector power dissipation of 600 mW.
In operation, the transistor is biased by applying a voltage to the base terminal. This bias voltage creates a space charge layer at the junction between the base and the emitter. This layer of electrons enables current flow through the emitter-base junction. When a current is induced by applying a voltage across the emitter-base junction, the transistor is said to be in forward active mode. This current is then amplified by the current gain (hFE) of the device.
The device is capable of operating at a frequency of up to 100 MHz. This allows it to be used in applications where high-speed switching is needed. Additionally, its low input capacitance and fast switching speed make it suitable for applications where transient response time is important.
The NJW0281G is a versatile device that can be used for a variety of audio amplification and high-speed switching applications. It is capable of providing high current gains, low input capacitance, and fast switching speeds, making it ideal for a wide range of audio amplification and switching applications.
The specific data is subject to PDF, and the above content is for reference
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