NJW0302G Allicdata Electronics
Allicdata Part #:

NJW0302GOS-ND

Manufacturer Part#:

NJW0302G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 250V 15A TO-3P
More Detail: Bipolar (BJT) Transistor PNP 250V 15A 30MHz 150W T...
DataSheet: NJW0302G datasheetNJW0302G Datasheet/PDF
Quantity: 884
Stock 884Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3L
Description

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The NJW0302G is a single Bipolar Junction Transistor (BJT) device that has a wide range of applications and utilizes a variety of working principles.

The NJW0302G is a PNP type BJT and is primarily used for audio amplification or switching applications. Its maximum collector-emitter voltage is 60V and its maximum collector current is 2A. It is a low noise device which is ideal for audio amplification applications. Additionally, its low RDSon and high power dissipation capabilities makes it a suitable choice for switching applications.

The NJW0302G utilizes NPN and PNP transistors in its construction. In an NPN BJT, current flows from the collector (C) to the emitter (E) when a base (B) voltage is applied. This is also referred to as forward biased mode. The PNP BJT is reverse biased; when a base voltage is applied, current will flow from the emitter to the collector.

The NJW0302G features an integrated NPN and PNP transistor chip. This device is designed to have a low voltage offset and low noise operation, making it well suited for audio amplification applications. Additionally, it is designed to withstand high power dissipation and high frequency operation, making it a suitable choice for switching applications.

The BJT design of the NJW0302G allows for the use of a variety of biasing techniques for specific applications. The two most common biasing techniques are collector-emitter biasing and base-emitter biasing. Collector-emitter biasing is used for audio amplification applications; the base voltage of the transistor is adjusted to achieve the desired collector current. Base-emitter biasing is used for switching applications; the collector voltage of the transistor is adjusted to achieve the desired base current.

The NJW0302G is a versatile device and can be used in a variety of applications. Its low power consumption, low voltage offset, and high power dissipation capabilities make it an ideal choice for audio amplification and switching applications. Additionally, its wide range of biasing techniques makes it a suitable choice for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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