NRVTS1545EMFST1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io):	15A
Voltage - Forward (Vf) (Max) @ If:	600mV @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	50µA @ 45V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:	-55°C ~ 175°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The NRVTS1545EMFST1G is a high temperature and high-speed semiconductor made of silicon. This semiconductor can be classified into diodes - rectifiers - single. It has a wide range of applications and its working principle is relatively simple.

Application Field

The NRVTS1545EMFST1G semiconductor is mainly used in communication systems, power electronics, and industrial control systems. In communication systems, the NRVTS1545EMFST1G operates as a high-speed rectifier (HIDR). It is usually used for the Switch Mode Power Supplies (SMPS) or Resonant Power Supplies (RPS). It can operate with a wide range of frequencies, up to hundreds of kilohertz. It has an excellent linearity and high temperature stability, making it ideal for these applications.In power electronics, the NRVTS1545EMFST1G is used as a fast-recovery diode (FRD). It can achieve a very low reverse recovery current and so is ideal for use in switched mode power supplies and DC/DC converter applications. It has a low capacitance and can handle high currents, allowing it to be used in high current applications.In industrial control systems, the NRVTS1545EMFST1G is used as a fast switching, high-speed switching device (HSSD). It can be used to switch high-power signals such as those used in stepper motors and variable frequency drives (VFDs). The NRVTS1545EMFST1G is also used in data transmission systems, as it can operate in high frequencies, up to hundreds of kilohertz.

Working Principle

The NRVTS1545EMFST1G consists of two main parts, the P-type and the N-type. The P-type consists of two main terminals, the anode and the cathode. The anode is connected to a positive voltage and the cathode is connected to a negative voltage. When a voltage is applied to the diode, current flows in one direction only, and no current flows in the reverse direction. This is the basic working principle of the NRVTS1545EMFST1G. The NRVTS1545EMFST1G also has a built-in reverse bias protection diode, which prevents current from flowing in the reverse direction. When a voltage is applied to the diode, the reverse bias protection diode will prevent current from flowing in the reverse direction.The NRVTS1545EMFST1G also has a temperature sensor built in. The temperature sensor will detect the temperature of the semiconductor and will automatically adjust the voltage applied to the diode, which ensures that the semiconductor stays at the correct operating temperature.

Conclusion

The NRVTS1545EMFST1G is a high temperature and high-speed semiconductor made of silicon. It can be used in communication systems, power electronics, and industrial control systems, and its working principle is relatively simple. It can achieve a very low reverse recovery current, has a low capacitance, and temperature sensor built in. These features make the NRVTS1545EMFST1G an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description