Allicdata Part #: | NRVTSM245ET3G-ND |
Manufacturer Part#: |
NRVTSM245ET3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 2A 45V POWERMITE2 |
More Detail: | Diode Schottky 45V 2.2A Surface Mount Powermite |
DataSheet: | NRVTSM245ET3G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.04819 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io): | 2.2A |
Voltage - Forward (Vf) (Max) @ If: | 650mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 75µA @ 45V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Introduction
NRVTSM245ET3G can be classified as a single rectifier diode. It is a high-temperature PN-junction diode with a metal-ceramic package. The NRVTSM245ET3G has a compact design, low forward voltage drop, and fast switching speeds, making it an ideal device for various power applications.
This diode has an epoxy coating which is used to provide insulation and protection from moisture and dust. The metal-ceramic package provides a thermal and robust performance, allowing for long-term reliability and high efficiency.
Application Field
The NRVTSM245ET3G offers fast switching, a low forward voltage drop, and a compact size making it an ideal device for various power applications, such as:
- Battery chargers
- DC-DC converters
- Uninterruptible power supplies (UPS)
- Switching power supplies
- Voltage regulators
- Power factor control circuits
- Pulse circuits
Working Principle
The NRVTSM245ET3G is a single rectifier diode that utilizes a PN junction to conduct current. It is composed of a metal-ceramic package which encapsulates and supports the diode die. The metal-ceramic package provides insulation and protection from moisture and dust.
When the anode of the diode is positive in relation to the cathode, the diode will conduct current. This will allow electrons to flow through the diode from the anode to the cathode. Conversely, when the cathode is positive in relation to the anode, the diode is said to be “reverse biased” and will not conduct current.
When the diode is forward biased, the voltage drop across the diode is lower, typically between 0.6 V to 0.7 V. This lower voltage drop allows more efficient operation of the device, as more current is able to pass through the diode. When the diode is in reverse bias, the voltage drop across the diode is higher, typically between 1.2 V to 1.7V.
Conclusion
The NRVTSM245ET3G is a single rectifier diode with excellent performance characteristics. It has a low forward voltage drop, making it ideal for applications requiring efficient operation, such as DC-DC converters, voltage regulators, and power factor controllers. Additionally, the metal-ceramic package provides insulation and protection from moisture and dust, making it a reliable and robust device.
The specific data is subject to PDF, and the above content is for reference
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