Allicdata Part #: | NRVUA210VT3G-ND |
Manufacturer Part#: |
NRVUA210VT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 2A SMA |
More Detail: | Diode Standard 100V 2A Surface Mount SMA |
DataSheet: | NRVUA210VT3G Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 940mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The NRVUA210VT3G is classified as a single rectifier diode. It is made up of two different types of material—an anode and a cathode—with a junction between the two materials. A rectifier is basically an electronic component whose purpose is to convert alternating current (AC) into direct current (DC). It works by allowing electric current to flow in one direction only, blocking flow from the opposite direction.
The NRVUA210VT3G is designed to handle a peak current of 210 A and a reverse voltage of 3.0V. It is typically used in a variety of applications, including motor control, power supplies, AC/DC converters, and lighting fixtures. It is also commonly used in automotive and consumer electronic products, as well as PC boards. Moreover, it can be used in telecommunications, industrial and medical applications.
The construction of the NRVUA210VT3G involves two layers of semiconductor materials that act as diodes. The anode is made of P-type semiconductor material and the cathode is made of N-type material. The junction between these materials acts as a rectifier, allowing current to pass in only one direction. When the voltage is applied to the device, the p-n junction barrier breaks down, allowing current to flow through the diode. This results in a drop of voltage across the diode, called a “forward-biased drop”.
The NRVUA210VT3G has a variety of features that make it an ideal choice for many applications. It is highly reliable and suitable for both high- and low-powered applications. It has a low forward voltage drop, meaning it consumes less power when in operation. It also has very low junction capacitance, which helps to minimize EMI (electromagnetic interference). Furthermore, the NRVUA210VT3G has a high surge current rating, making it suitable for rectifying high voltage and high inductive loads.
In order to ensure proper operation, it is important to ensure that all of the design parameters, such as forward and reverse voltage, peak current, and temperature rating are properly specified. It is also important to note that the reverse recovery time must be considered when using this device in high frequency applications. In addition, the diode must be properly mounted to a heat sink in order to maximize its efficiency and reduce the risk of overheating.
When it comes to application fields and working principles, the NRVUA210VT3G is an ideal choice for a variety of applications. It is a highly reliable, efficient, and low-cost device that is suitable for a range of power applications. Whether it is used in motor controls, power supplies, AC/DC converters, lighting fixtures, telecommunications, industrial, or medical applications, the NRVUA210VT3G is a reliable and efficient diode that can meet all of your requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NRVUS160VT3G | ON Semicondu... | -- | 2500 | DIODE GEN PURP 600V 2A SM... |
NRVUS220VT3G | ON Semicondu... | -- | 2500 | DIODE GEN PURP 200V 2A SM... |
NRVUA140VT3G | ON Semicondu... | -- | 15000 | DIODE GEN PURP 400V 2A SM... |
NRVUS240T3G | ON Semicondu... | 0.16 $ | 1000 | DIODE GEN PURP 400V 2A SM... |
NRVUS230T3G | ON Semicondu... | 0.16 $ | 2500 | DIODE GEN PURP 300V 2A SM... |
NRVUD320VT4G | ON Semicondu... | -- | 492 | DIODE GEN PURP 200V 3A DP... |
NRVUB1620CTT4G | ON Semicondu... | 1.05 $ | 800 | DIODE GEN PURP 200V 8A D2... |
NRVUB1660CTT4G | ON Semicondu... | 1.27 $ | 1000 | DIODE ARRAY GP 600V 8A D2... |
NRVUD620CTG-VF01 | ON Semicondu... | 0.39 $ | 2550 | DIODE ARRAY GP 200V 3A DP... |
NRVUS240VT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 2A SM... |
NRVUS360VBT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A SM... |
NRVUA110VT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 2A SM... |
NRVUA120VT3G | ON Semicondu... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
NRVUD320W1T4G-VF01 | ON Semicondu... | 0.17 $ | 1000 | DIODE GEN PURP 200V 3A DP... |
NRVUD550PFT4G-VF01 | ON Semicondu... | 0.32 $ | 1000 | DIODE GEN PURP 520V 5A DP... |
NRVUHS160VT3G | ON Semicondu... | 0.34 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
NRVUD340T4G-VF01 | ON Semicondu... | 0.36 $ | 1000 | DIODE GEN PURP 400V 3A DP... |
NRVUS120VT3G | ON Semicondu... | -- | 2500 | DIODE GEN PURP 200V 2A SM... |
NRVUA160VT3G | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 600V 2A SM... |
NRVUS110VT3G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
NRVUA210VT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 2A SM... |
NRVUA220VT3G | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
NRVUS360VDBT3G | ON Semicondu... | 0.13 $ | 1000 | DIODE GEN PURP 600V 3A SM... |
NRVUS230VT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 300V 2A SM... |
NRVUB1620CTRT4G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 8A D2... |
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