NRVUS120VT3G Discrete Semiconductor Products |
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Allicdata Part #: | NRVUS120VT3GOSTR-ND |
Manufacturer Part#: |
NRVUS120VT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 200V 2A SMB |
More Detail: | Diode Standard 200V 2A Surface Mount SMB |
DataSheet: | NRVUS120VT3G Datasheet/PDF |
Quantity: | 2500 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 2µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are a type of two-terminal electrical component that facilitates unidirectional current flow. Rectifiers are one type of diode specifically designed to convert an AC signal into a DC signal and they consist of one or more diodes arranged in such a way that they effectively rectify the AC input signal. Single rectifiers refer to a type of rectifier containing a single diode that can only operate when forward-biased.The NRVUS120VT3G is a single rectifier suitable for power management and automotive applications, performing well when utilized in existing designs meant for 120V high-voltage operations. This device is housed in a PG-TO-220F-1 package, which is an insulated to-220 transistor package capable of withstanding temperatures up to 150 ℃. The NRVUS120VT3G comes with a total power dissipation rate of 2 watts and a maximum forward current of 2.4 amperes.The working principle of the NRVUS120VT3G follows the same principle used by all single rectifiers. When forward-biased, the diode allows the electric current to flow through itself but prevents current from flowing in the opposite direction. This is due to a characteristic known as the PN-junction.As the name implies, the PN-junction consists of two layers—a positive layer (P-type) and a negative layer (N-type). When the two layers are connected together, a diode diode is formed. In order to conduct current, a forward bias voltage needs to be applied; otherwise, the PN-junction acts as a perfect insulator and current cannot flow through it.In the NRVUS120VT3G, when a current flows from the anode (positive) to the cathode (negative), the PN-junction is forward-biased and allows the current to flow through. However, when current tries to flow from the cathode to the anode, the diode becomes reverse-biased and the PN-junction acts as an open circuit, not allowing the current to flow.Another key characteristic of the NRVUS120VT3G is its recovery time. The time that it takes for the diode to return to its non-conductive state after it is forward biased is known as its recovery time. The NRVUS120VT3G has an average recovery time of 6 nanoseconds, making it suitable for applications that require a fast switching speed such as switching power supplies and other power management applications.In conclusion, the NRVUS120VT3G is a single rectifier suitable for automotive and power management applications, capable of automatically converting an alternating current into a direct current. Its key features include a PN-junction for unidirectional current flow, a maximum forward current of 2.4 amperes, a total power dissipation of 2 watts, and an average recovery time of just 6 nanoseconds. With these features, the NRVUS120VT3G is well-suited for designs willing to utilize a high-voltage, fast-switching single rectifier.
The specific data is subject to PDF, and the above content is for reference
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