NSB1706DMW5T1G Allicdata Electronics

NSB1706DMW5T1G Discrete Semiconductor Products

Allicdata Part #:

NSB1706DMW5T1GOSTR-ND

Manufacturer Part#:

NSB1706DMW5T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SC70
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSB1706DMW5T1G datasheetNSB1706DMW5T1G Datasheet/PDF
Quantity: 33000
Stock 33000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Base Part Number: NSB1706
Description

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The NSB1706DMW5T1G is a pre-biased array of bifet transistors from ON Semiconductor specifically designed for automotive applications. The array contains two independent N-Channel enhancement-mode vertical DMOS FETs, each possessing dual source-drain paths. The NSB1706DMW5T1G has been developed to provide a low-cost solution for applications requiring short circuit protection in automotive systems such as motors and lamps, as well as for battery cell pre-charging.}

The main feature of the NSB1706DMW5T1G array is its pre-biased gate, which allows the device to be used in applications that require a minimum of gate drive. The pre-biased gate allows the array to be used as a DC-DC converter, as well as for applications that require a consistent drain current, such as LED lighting. The device has a wide range of operating conditions, including a junction temperature range of -40°C to 150°C and a voltage range of 5 V to 55 V.

The NSB1706DMW5T1G array is implemented with the use of a single vertical power MOSFET. The vertical structure of the device allows for an optimized gate-to-source voltage (also known as forward bias) and provides excellent heat sinking for efficient temperature control. Furthermore, the vertical structure makes the device well-suited for applications that require high-voltage flexibility and improved thermal dissipation. The device features a low on-state resistance, which leads to improved energy efficiency.

The working principle of the NSB1706DMW5T1G array is the same as any other MOSFET. A voltage is applied to the gate, creating a “gate-to-source” potential, which in turn creates an electric field that causes a current to flow between the source and the drain. As a result, the device acts as a switch, allowing the controlled flow of current through the source and the drain. The voltage on the gate must be greater than the threshold voltage for the device to be activated. The device has excellent on-resistance, which is further improved through the use of a low threshold voltage.

The NSB1706DMW5T1G array is designed to provide a robust, reliable and cost-effective solution for automotive systems. The device provides excellent thermal performance and is well-suited for automotive applications that require reliable switching and high-voltage flexibility. Furthermore, the device is well-suited for applications that require a lowered threshold voltage and a low on-resistance, making the NSB1706DMW5T1G the ideal choice for a variety of automotive applications.

The specific data is subject to PDF, and the above content is for reference

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