NSM21356DW6T1G

NSM21356DW6T1G is a pre-biased NPN bipolar junction transistor (BJT) array, consisting of six complementary NPN transistors with a maximum collector-emitter voltage rating of 60V. Pre-biased means that the collector–base junction of the NPN transistors is pre-biased to a specific voltage level, making it easier to connect them in series or parallel.

The NSM21356DW6T1G is commonly used in RF circuits and also in power amplifiers, switching applications and audio amplifiers. It is particularly suited to switch mode power supplies and other high switching frequency circuits due to its low saturation voltage and very fast switching times.

When used in an RF circuit, the NSM21356DW6T1G can provide high power gain, excellent noise performance, and very low operating losses. The transistor array can be used as a matched pair or in multiple stages for higher power amplification. Its wide frequency response and stability are also suitable for a variety of high frequency applications.

The basic working principle of the NSM21356DW6T1G is that, when a current flows through the base (B) of the NPN transistor, it causes the emitter (E) to become more positive, allowing current to flow between the base and collector (C) of the transistor. This causes a current to also flow between the collector and emitter. The amount of current flowing (i.e. the current gain) is determined by the ratio of the collector current to the base current, known as the collector current gain or hfe.

The NSM21356DW6T1G is able to provide an hfe of up to 1000 and a very low saturation voltage of about 0.4V at room temperature, making it ideal for high frequency, high volume applications such as RF circuits and audio amplifiers. In addition, the transistor array can be used in multiple stages for higher current gain and performance.

In summary, the NSM21356DW6T1G is a pre-biased NPN bipolar junction transistor (BJT) array, commonly used in RF circuits, power amplifiers, and other high switching frequency circuits. It provides excellent noise performance and very low operating losses. The transistor array can be used as a matched pair or in multiple stages for higher power amplification, allowing the device to be used in a wide range of applications.