NSR30CM3T5G Discrete Semiconductor Products

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The NSR30CM3T5G is a highly effective semiconductor device that is often used in rectifier diode arrays. It is constructed from an epitaxial silicon substrate and forms an I-V curve that is perfect for rectifier diodes arrays and other power control applications.

The NSR30CM3T5G is a Schottky Barrier Rectifier (SBR) and has a total forward current of 30A. It is also the most common type of SBR found in rectifier diode arrays. These devices have a very low forward voltage drop, generally between 0.25 and 0.3V, which makes them ideal for a variety of applications. They are also very fast switching, with a maximum reverse recovery time of 100 nanoseconds.

The NSR30CM3T5G is widely used in a number of different applications, from power control circuits, to motor control and other AC/DC control applications. They are also widely used for battery charging purposes and in solar power systems. In power control applications, the NSR30CM3T5G can be used as a switching diode to ensure that voltage is regulated across the load and prevent excessive power dissipation.

The working principle of the NSR30CM3T5G is quite simple. It operates in the forward biased condition, which means that current will only flow when a voltage greater than the forward voltage of the device is applied. In the reverse biased condition, current will not flow, thus preventing the device from short circuiting or overloading. In order to operate properly, the voltage must be greater than the forward voltage drop of the device.

The NSR30CM3T5G has a range of features that make it an excellent choice for rectifier diode arrays and other power control applications. They offer excellent performance with very low forward voltage drop, a very fast switching time, good thermal stability and excellent mechanical stability. They can also handle large currents, up to 30A, which makes them suitable for high power applications.

The NSR30CM3T5G is a highly reliable device that can be used in a wide range of applications. It is an ideal choice for rectifier diode arrays and other power control applications, and can easily handle large currents without the risk of overloading or short-circuiting.

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