Allicdata Part #: | NSTJD1155LT1G-ND |
Manufacturer Part#: |
NSTJD1155LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 8V 1.3A SC88 |
More Detail: | Mosfet Array |
DataSheet: | NSTJD1155LT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The NSTJD1155LT1G is a relative new type of transistor array, specifically designed for use in SMD (Surface Mount Device) applications. It uses a combination of field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs) to form an array of 16 independent FETs or MOSFETs. The NSTJD1155LT1G is widely used in applications such as voltage regulators, power amplifiers and switching circuits.
The NSTJD1155LT1G is composed of two gate-controlled devices. The first is an N-channel MOSFET and the second is an P-channel MOSFET. Each N-channel MOSFET is capable of switching up to 12V, while the P-channel MOSFET can switch up to 4V. In addition, each of the two FETs has its own gate driver, allowing it to be independently operated from the other FETs in the array. This makes the NSTJD1155LT1G ideal for use in multi-input, multi-output (MIMO) applications.
The working principle of the NSTJD1155LT1G is quite simple. When an input voltage is applied to the gate of either the N-channel or P-channel FET, the resulting voltage across the channel creates a small current flow, which allows the gate driver to turn on the FET. This in turn allows the current to flow through the channel and create a voltage drop across the channel, which is used to control the level of the output voltage. The resulting output voltage is then used to control other components in the application.
The NSTJD1155LT1G is widely used in applications such as voltage regulators, power amplifiers and switching circuits. In voltage regulators, the NSTJD1155LT1G is used to accurately regulate the output voltage of the regulator by using the MOSFETs to control the current flow through the devices. In power amplifiers, the NSTJD1155LT1G is used to control the bias voltage of the amplifier and to adjust the gain of the amplifier to achieve the desired power output. Finally, the NSTJD1155LT1G is also used in switching circuits to switch current between various points in a circuit.
In conclusion, the NSTJD1155LT1G is a versatile transistor array that is ideal for use in MIMO applications. It is capable of switching up to 12V and 4V, and is capable of providing precise control over the output voltage. Furthermore, it is widely used in applications such as voltage regulators, power amplifiers and switching circuits, making it a popular choice for designers and engineers alike.
The specific data is subject to PDF, and the above content is for reference
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