NSVEMT1DXV6T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	500mW
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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Introduction

NSVEMT1DXV6T1G is an integrated array of bipolar transistors. It offers high performance, low power dissipation, and a versatile set of features that make it ideal for mass production in a wide range of applications. The design of NSVEMT1DXV6T1G has been tailored to optimize the performance within a given range of applications and environmental conditions.

Application Field

NSVEMT1DXV6T1G can be used in a variety of applications, ranging from analog and digital circuit design to power distribution and industrial control. It provides excellent performance for general purpose switching applications and low side switching of motor control, lighting, servo control, and many other designs. Built-in protection features such as short circuit protection, over-power control and short release protection make it ideal for industrial applications where robust protection is needed. Its small form factor also makes it suitable for use in miniature devices and tight spaces.

Working Principle

The NSVEMT1DXV6T1G integrated array consists of several tightly packed transistors, each of which is an NPN type. This type of structure ensures the low power dissipation and optimal performance related to this device. An N-channel field-effect transistor (FET) is integrated into the unit to control the current through the NPN transistors. The FET is used as a switch to turn on and off the NPN transistors and thus controlling the current flow through the device. The output of the device can also be used to control other signals. For example, it can be used as an input-output interface for a microcontroller or for controlling the current flow in a circuit.

Summary

In conclusion, the NSVEMT1DXV6T1G array is a versatile and high performance integrated package of bipolar transistors. It can be used in a variety of applications ranging from analog and digital circuit design to power distribution and industrial control, and its protection features make it ideal for harsh environments. Its small form factor also makes it suitable for use in tight spaces and miniature devices.

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