NSVEMC2DXV5T1G Allicdata Electronics

NSVEMC2DXV5T1G Discrete Semiconductor Products

Allicdata Part #:

NSVEMC2DXV5T1GOSTR-ND

Manufacturer Part#:

NSVEMC2DXV5T1G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 50V BIPOLAR SOT553
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSVEMC2DXV5T1G datasheetNSVEMC2DXV5T1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07204
8000 +: $ 0.06767
12000 +: $ 0.06331
28000 +: $ 0.05821
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: SOT-553
Description

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The NSVEMC2DXV5T1G is a bipolar junction transistor (BJT) array pre-biased discrete semiconductor device, which can be used for a variety of applications. It is comprised of 36 transistors, each having an independent emitter and collector, arranged as a 5×2 array. The main purpose of this part is to provide an efficient switching ability in applications with space-constrained form factors.

A BJT pre-biased array is generally used in applications that are highly demanding in terms of speed, power, gain and reliability. Applications like automotive systems, industrial automation and consumer electronics make use of this pre-biased array to provide their systems with the benefits of BJT over other types of transistors.

The working principle for the NSVEMC2DXV5T1G is based on the two major characteristics of BJTs: their variable current gain and their ability to reverse-bias the collector-emitter junction by applying a voltage to the base. This allows for a controllable current flow between the source and the drain. This makes it suitable for applications that require fast switching and high current handling capacities.

In addition, this single package contains 36 components and thus provides a more efficient use of space. Instead of requiring 36 individual components, a single pre-biased array can be used to achieve the same result, thus making it suitable for applications that have limited space available.

The NSVEMC2DXV5T1G can be used in a variety of applications. These include, but are not limited to, power supplies and converters, audio amplifiers, RF amplifiers, motor control, and various industrial measurement and testing systems. The device is also capable of operating over a wide temperature range and has a solid state construction, making it highly reliable and long-lasting.

In conclusion, the NSVEMC2DXV5T1G is a reliable and highly efficient BJT pre-biased array that can be used in a variety of applications. Thanks to its efficient use of space and its superior switching capability, this part is ideal for those applications that require fast switching and high current handling capacity.

The specific data is subject to PDF, and the above content is for reference

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